JMnic
Product Specification
Silicon PNP Power Transistors
2SB727K
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD768K
・DARLINGTON
APPLICATIONS
・For
medium speed and power
switching applications
PINNING
PIN
1
2
3
Base
Collector; connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-7
-6
-10
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
C
=-25mA, R
BE
=∞
I
E
=-50mA, I
C
=0
I
C
=-3A ,I
B
=-6mA
I
C
=-6A ,I
B
=-60mA
I
C
=-3A ,I
B
=-6mA
I
C
=-6A ,I
B
=-60mA
V
CB
=-120V, I
E
=0
V
CE
=-100V, R
BE
=∞
I
C
=-3A ; V
CE
=-3V
1000
MIN
-120
-7
2SB727K
TYP.
MAX
UNIT
V
V
-1.5
-3.0
-2.0
-3.5
-100
-10
20000
V
V
V
V
μA
μA
Switching times
t
on
t
off
Turn-on time
I
C
=-3A, I
B1
=-I
B2
=-6mA
Turn-off time
3.0
μs
1.0
μs
2
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