JMnic
Product Specification
Silicon PNP Power Transistors
2SB757
DESCRIPTION
・With
TO-3PN package
・High
collector current
・Wide
area of safe operation
・Complement
to type 2SD847
APPLICATIONS
・Audio
amplifications
・Serie
regulators
・General
purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-40
-40
-5
-15
-5
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.56
UNIT
℃/W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB757
MAX
UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-0.1mA; I
E
=0
-40
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA; I
B
=0
-40
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-0.1mA; I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A; I
B
=-0.5A
-0.8
V
V
BEsat
Base-emitter on voltage
I
C
=-5A; I
B
=-0.5A
-1.8
V
μA
I
CBO
Collector cut-off current
V
CB
=-40V; I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-100
μA
h
FE
DC current gain
I
C
=-5A ; V
CE
=-2V
40
240
Switching times
μs
t
on
Turn-on time
I
C
=-15A;I
B1
=-I
B2
=-1.5A
R
L
=2Ω;P
W
=20μs,Duty≤2%
1.0
t
s
Storage time
2.0
μs
t
f
Fall time
1.0
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB757
Fig.2 outline dimensions
3
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