CTLM3410-M832DBK datasheet, PDF

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CTLM3410-M832DBK: DescriptionPower Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10; CategoryDiscrete semiconductor The transistor; File Size402KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CTLM3410-M832DBK Overview

Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10

CTLM3410-M832DBK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	3 X 2 MM, LEADLESS PACKAGE-10
Contacts	10
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	25 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-N8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.65 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	NO LEAD
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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CTLM3410-M832D

CTLM7410-M832D

CTLM3474-M832D

SURFACE MOUNT

DUAL, LOW VCE (SAT)

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

TLM832D CASE

MARKING CODES:

CTLM3410-M832D: CFG

CTLM7410-M832D: CFH

CTLM3474-M832D: CFJ

APPLICATIONS

•

Switching Circuits

•

DC - DC Converters

•

LCD Backlighting

•

Battery powered / Portable Equipment

applications including Cell Phones,

Digital Cameras, Pagers, PDAs,

Notebook PCs, etc.

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLM3410-

M832D (Dual NPN), CTLM7410-M832D (Dual PNP),

and CTLM3474-M832D (Complementary NPN & PNP)

are Low VCE(SAT) Transistors packaged in the small,

thermally efficient, 3x2mm Tiny Leadless Module

(TLM™) surface mount case. These devices are

designed for applications where small size, operational

efficiency, and low energy consumption are the prime

requirements. Due to its leadless package design this

device is capable of dissipating up to 4 times the power

of similar devices in comparable sized surface mount

packages.

FEATURES

•

Dual Chip Device

•

High Current (1.0A) Transistors

•

Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)

•

High Power to Footprint Ratio of 275mW per sq mm

(Package Power Dissipation / Package Surface Area)

•

Small TLM 3x2mm Leadless Surface Mount Package

•

Complementary Devices

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

6.0

1.0

1.65

-65 to +150

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

NPN

PNP

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

ICBO

VCB=40V

100

IEBO

VEB=6.0V

100

BVCBO

IC=100µA

BVCEO

BVEBO

VCE(SAT)

IC=10mA

IE=100µA

IC=50mA, IB=5.0mA

IC=100mA, IB=10mA

6.0

UNITS

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm

R3 (1-August 2011)

CTLM3410-M832DBK Related Products

	CTLM3410-M832DBK	CTLM3474-M832DTR	CTLM3474-M832DTRLEADFREE	CTLM3410-M832DTR	CTLM7410-M832DTRLEADFREE	CTLM7410-M832DTR	CTLM3474-M832DBK	CTLM7410-M832DBK	CTLM7410-M832DBKLEADFREE	CTLM3410-M832DBKLEADFREE
Description	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Small Signal Bipolar Transistor, 1A I(C), NPN and PNP	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Transistor	Transistor
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	,	,
Reach Compliance Code	compliant	compliant	unknown	compliant	unknown	compliant	compliant	compliant	unknown	unknown
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Minimum DC current gain (hFE)	50	50	100	50	100	50	50	50	100	100
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN AND PNP	NPN/PNP	NPN	PNP	PNP	NPN AND PNP	PNP	PNP	NPN
Maximum power dissipation(Abs)	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Contacts	10	10	-	10	-	10	10	10	-	-
ECCN code	EAR99	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	-	-
Shell connection	COLLECTOR	COLLECTOR	-	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	-	-
Collector-emitter maximum voltage	25 V	25 V	-	25 V	-	25 V	25 V	25 V	-	-
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-	-
JESD-30 code	R-PDSO-N8	R-PDSO-N8	-	R-PDSO-N8	-	R-PDSO-N8	R-PDSO-N8	R-PDSO-N8	-	-
JESD-609 code	e3	e3	-	e3	-	e3	e3	e3	-	-
Humidity sensitivity level	1	1	-	1	-	1	1	1	-	-
Number of components	2	2	-	2	-	2	2	2	-	-
Number of terminals	8	8	-	8	-	8	8	8	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-
Certification status	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	-
Terminal surface	MATTE TIN	MATTE TIN	-	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN	-	-
Terminal form	NO LEAD	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	-	-
Terminal location	DUAL	DUAL	-	DUAL	-	DUAL	DUAL	DUAL	-	-
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	-	-
Transistor component materials	SILICON	SILICON	-	SILICON	-	SILICON	SILICON	SILICON	-	-

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