CTLM3410-M832DBKLEADFREE datasheet, PDF

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CTLM3410-M832DBKLEADFREE: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size402KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CTLM3410-M832DBKLEADFREE Overview

Transistor

CTLM3410-M832DBKLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	1 A
Minimum DC current gain (hFE)	100
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.65 W
surface mount	YES
Nominal transition frequency (fT)	100 MHz

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CTLM3410-M832D

CTLM7410-M832D

CTLM3474-M832D

SURFACE MOUNT

DUAL, LOW VCE (SAT)

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

TLM832D CASE

MARKING CODES:

CTLM3410-M832D: CFG

CTLM7410-M832D: CFH

CTLM3474-M832D: CFJ

APPLICATIONS

•

Switching Circuits

•

DC - DC Converters

•

LCD Backlighting

•

Battery powered / Portable Equipment

applications including Cell Phones,

Digital Cameras, Pagers, PDAs,

Notebook PCs, etc.

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLM3410-

M832D (Dual NPN), CTLM7410-M832D (Dual PNP),

and CTLM3474-M832D (Complementary NPN & PNP)

are Low VCE(SAT) Transistors packaged in the small,

thermally efficient, 3x2mm Tiny Leadless Module

(TLM™) surface mount case. These devices are

designed for applications where small size, operational

efficiency, and low energy consumption are the prime

requirements. Due to its leadless package design this

device is capable of dissipating up to 4 times the power

of similar devices in comparable sized surface mount

packages.

FEATURES

•

Dual Chip Device

•

High Current (1.0A) Transistors

•

Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)

•

High Power to Footprint Ratio of 275mW per sq mm

(Package Power Dissipation / Package Surface Area)

•

Small TLM 3x2mm Leadless Surface Mount Package

•

Complementary Devices

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

6.0

1.0

1.65

-65 to +150

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

NPN

PNP

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

ICBO

VCB=40V

100

IEBO

VEB=6.0V

100

BVCBO

IC=100µA

BVCEO

BVEBO

VCE(SAT)

IC=10mA

IE=100µA

IC=50mA, IB=5.0mA

IC=100mA, IB=10mA

6.0

UNITS

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm

R3 (1-August 2011)

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Description	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Small Signal Bipolar Transistor, 1A I(C), NPN and PNP	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	,	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10
Reach Compliance Code	unknown	compliant	unknown	compliant	unknown	compliant	compliant	compliant	unknown	compliant
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Minimum DC current gain (hFE)	100	50	100	50	100	50	50	50	100	50
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN AND PNP	NPN/PNP	NPN	PNP	PNP	NPN AND PNP	PNP	PNP	NPN
Maximum power dissipation(Abs)	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Contacts	-	10	-	10	-	10	10	10	-	10
ECCN code	-	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	-	EAR99
Shell connection	-	COLLECTOR	-	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR
Collector-emitter maximum voltage	-	25 V	-	25 V	-	25 V	25 V	25 V	-	25 V
Configuration	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS
JESD-30 code	-	R-PDSO-N8	-	R-PDSO-N8	-	R-PDSO-N8	R-PDSO-N8	R-PDSO-N8	-	R-PDSO-N8
JESD-609 code	-	e3	-	e3	-	e3	e3	e3	-	e3
Humidity sensitivity level	-	1	-	1	-	1	1	1	-	1
Number of components	-	2	-	2	-	2	2	2	-	2
Number of terminals	-	8	-	8	-	8	8	8	-	8
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	-	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Certification status	-	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Terminal surface	-	MATTE TIN	-	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN	-	MATTE TIN
Terminal form	-	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD
Terminal location	-	DUAL	-	DUAL	-	DUAL	DUAL	DUAL	-	DUAL
transistor applications	-	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
Transistor component materials	-	SILICON	-	SILICON	-	SILICON	SILICON	SILICON	-	SILICON

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