CMLDM7002ABK datasheet, PDF - EEWORLD Datasheet

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CMLDM7002ABK: DescriptionSmall Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6; CategoryDiscrete semiconductor The transistor; File Size225KB，2 Pages; ManufacturerCentral Semiconductor

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CMLDM7002ABK Overview

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6

CMLDM7002ABK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.28 A
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-F6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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CMLDM7002A

CMLDM7002AG*

CMLDM7002AJ

SURFACE MOUNT PICOmini

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

Central

Semiconductor Corp.

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are dual

Enhancement-mode N-Channel Field Effect Transistors,

manufactured by the N-Channel DMOS Process, designed

for high speed pulsed amplifier and driver applications. The

CMLDM7002A utilizes the USA pinout configuration, while

the CMLDM7002AJ utilizes the Japanese pinout

configuration. These devices offer low rDS (ON) and low

VDS(ON).

MARKING CODES: CMLDM7002A:

CMLDM7002AG*:

CMLDM7002AJ:

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

280

1.5

350

300

150

-65 to +150

357

SOT-563 CASE

Device is

Halogen Free

by design

L02

C2G

02J

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

IGSSF, IGSSR

VGS=20V, VDS=0V

100

IDSS

VDS=60V, VGS=0V

1.0

IDSS

VDS=60V, VGS=0V, TJ=125°C

500

ID(ON)

VGS=10V, VDS

≥2.0V

DS(ON)

500

BVDSS

VGS=0V, ID=10μA

VGS(th)

VDS=VGS, ID=250μA

1.0

2.5

VDS(ON)

VGS=10V, ID=500mA

1.0

VDS(ON)

VGS=5.0V, ID=50mA

0.15

VGS=0V, IS=400mA

1.2

VSD

rDS(ON)

VGS=10V, ID=500mA

2.0

rDS(ON)

VGS=10V, ID=500mA, TJ=125°C

3.5

rDS(ON)

VGS=5.0V, ID=50mA

3.0

rDS(ON)

VGS=5.0V, ID=50mA, TJ=125°C

5.0

gFS

VDS

≥2V

DS(ON), ID=200mA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm

UNITS

μA

R4 (8-January 2009)

CMLDM7002ABK Related Products

	CMLDM7002ABK	CMLDM7002AJTR	CMLDM7002AJBK	CMLDM7002ATR	CMLDM7002AGTR	CMLDM7002AGBK
Description	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-563, 6 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-563, 6 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	PACKAGE-6	PACKAGE-6
Contacts	6	6	6	6	6	6
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
Maximum drain current (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
Maximum drain-source on-resistance	2 Ω	2 Ω	2 Ω	2 Ω	2 Ω	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF	5 pF	5 pF	5 pF	5 pF	5 pF
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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