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PDU-C111-Q

Description
Photo Diode,
CategoryLED optoelectronic/LED    photoelectric   
File Size51KB,1 Pages
ManufacturerLuna Optoelectronics
Download Datasheet Parametric View All

PDU-C111-Q Overview

Photo Diode,

PDU-C111-Q Parametric

Parameter NameAttribute value
MakerLuna Optoelectronics
Reach Compliance Codeunknown
PHOTONIC
Silicon Photodiode, U.V. Enhanced Photoconductive
Type PDU-C111-Q
DETECTORS INC.
PACKAGE DIMENSIONS INCH (mm)
Ø0.795
Ø[20.19]
Ø0.720
Ø[18.29]
Ø0.608 Ø[15.44]
QUARTZ WINDOW
CAP
WIRE
BONDS
VIEWING
ANGLE 54°
Ø0.4447
ACTIVE AREA
HEADER
PHOTODIODE CHIP
0.030[0.76]
0.200 [5.08]
UNUSED PIN
CATHODE
CASE GROUND
0.230 [5.84]
0.165 [4.19]
0.375 [9.53]
Ø0.030 [0.76]
TYP
ANODE
Ø0.500 [ Ø12.70] PIN CIRCLE
TO-8 .795 INCH (20.19) DIA PACKAGE
ACTIVE AREA = 100.20 mm
2
FEATURES
High speed
U.V. enhanced
Low capacitance
Quartz window
DESCRIPTION
The
PDU-C111-Q
is a silicon, PIN planar
diffused, U.V. enhanced photodiode. Ideal
for high speed photoconductive applications.
Packaged in a low cost TO-8 metal can
with a flat quartz window.
RESPONSIVITY (A/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
APPLICATIONS
Spectrometers
Fluorescent analysers
U.V. meters
Colorimeters
SPECTRAL RESPONSE
10
E=
Q
0%
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
Operating Temperature Range
Soldering Temperature*
Light Current
-55
-40
30
+150
+125
+224
500
V
O
O
O
C
C
C
190
300
400
500
600
700
800
900
1000
1100
Hz
mA
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
R
SH
Temp. Coefficient
Junction Capacitance
H = 100 fc, 2850 K
H = 0, V
R
= 5 V
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 5 V**
190
.12
15
.18
25
1.5x10
-13
350
V
R
= 0 V,
l
= 254 nm
I = 10
m
A
V
R
= 10 mV @ Peak
RL = 1 K
V
R
= 5 V
7
1.0
1.3
10
15
-8
600
MAX
30
UNITS
mA
nA
M
% /
o
C
pF
λ
range
R
V
BR
NEP
tr
Spectral Application Range Spot Scan
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time
1100
nm
A/W
V
W/
nS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. **f = 1 MHz
[FORM NO. 100-PDU-C111-Q REV N/C]
1200
0

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