DAN217 datasheet, PDF - EEWORLD Datasheet

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DAN217: Description0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor Small signal switching diode; File Size208KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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DAN217 Overview

0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

DAN217 Parametric

Parameter Name	Attribute value
Case Style	SOT-23
IF（mA）	100
Maximum recurrent peak reverse voltage	80
TRR（nS)	4.0
Maximum instantaneous forward voltage	1.2
@IF（uA）	100
Maximum reverse curre	0.1
@VR	70
class	Diodes

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DAN217

Surface Mount Switching Diode

SOT-23

Features

Small surface mounting type.(UMD3,SMD3)

Two diode elements are connected in series.

Applications

High speed switching application.

Dimensions in inches and (millimeters)

Ordering Information

Type No.

DAN217

Marking

BA1

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Characteristic

Peak Reverse Voltage

DC Reverse Voltage

Maximum (peak)forward Current

Forward Continuous Current

Surge Current (1μs)

Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Symbol

FSM

STG

Limits

300

100

4000

200

125

-55 to +125

Unit

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Leakage Current

Symbol

(BR)R

Min

1.2

0.1

MAX

UNIT

μA

Test Condition

= 100μA

=100mA

=70V

http://www.luguang.cn

mail:lge@luguang.cn

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