3SK250TE85R datasheet, PDF - EEWORLD Datasheet

3SK250TE85R: DescriptionTRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size118KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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3SK250TE85R Overview

TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
Shell connection	SOURCE
Configuration	SINGLE
FET technology	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	15 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

	3SK250TE85R	3SK250TE85L
Description	TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal	TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal
Maker	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknow
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	15 dB	15 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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