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BLC8G27LS-210PV_15

Description
Power LDMOS transistor
File Size243KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLC8G27LS-210PV_15 Overview

Power LDMOS transistor

BLC8G27LS-210PV
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2600 to 2700
I
Dq
(mA)
1730
V
DS
(V)
28
P
L(AV)
(W)
65
G
p
(dB)
17
D
(%)
30
ACPR
5M
(dBc)
29
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth performance (150 MHz typical)
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
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