BLC8G27LS-245AV_15 datasheet, PDF

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BLC8G27LS-245AV_15: DescriptionPower LDMOS transistor; File Size177KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLC8G27LS-245AV_15 Overview

Power LDMOS transistor

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BLC8G27LS-245AV

Power LDMOS transistor

Rev. 1 — 16 December 2014

Product data sheet

1. Product profile

1.1 General description

240 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in an asymmetrical Doherty demo board. V

= 28 V;

= 500 mA (main); V

GS(amp)peak

= 0.5 V, unless otherwise specified.

Test signal

1-carrier W-CDMA

[1]

(MHz)

2500 to 2690

(V)

L(AV)

(W)

(dB)

14.5



(%)

ACPR

(dBc)

35

[1]

Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.

1.2 Features and benefits



Excellent ruggedness

High-efficiency

Low thermal resistance providing excellent thermal stability

Designed for broadband operation (2500 MHz to 2700 MHz)

Asymmetric design to achieve optimum efficiency across the band

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent digital pre-distortion capability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to

2700 MHz frequency range

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