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BLF6G10-135RN_15

Description
Power LDMOS transistor
File Size148KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF6G10-135RN_15 Overview

Power LDMOS transistor

BLF6G10-135RN;
BLF6G10LS-135RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
869 to 894
V
DS
(V)
28
P
L(AV)
(W)
26.5
G
p
(dB)
21.0
η
D
(%)
28.0
ACPR
(dBc)
−39
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 950 mA:
Average output power = 26.5 W
Power gain = 21.0 dB
Efficiency = 28.0 %
ACPR =
−39
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
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