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SBL550

Description
5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size198KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SBL550 Overview

5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

SBL530-SBL5100
Schottky Barrier Rectifiers
VOLTAGE RANGE:
30
---
100
V
CURRENT:
5.0
A
Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
19.0± 0.5
2.8± 0.1
TO-220AC
10.2± 0.2
φ
3.8± 0.15
4.5± 0.2
1.4± 0.2
High surge capability
For use in low voltage,high frequency inverters free
xxx x
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
PIN
1
2
8.9± 0.2
2.6± 0.2
3.5± 0.3
13.8± 0.5
5.0± 0.1
0.5± 0.1
Mechanical Data
Case:JEDEC TO-220AC,molded plastic
Polarity: As marked
Weight: 0.069 ounces,1.96 gram
Mounting position: Any
0.9± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBL
SBL
530 535
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T
C
=95
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load T
J
=125
Maximum instantaneous forw ard voltage
@ 5.0A
Maximum reverse current
@T
C
=25
SBL
540
40
28
40
SBL
545
45
32
45
5.0
SBL
550
50
35
50
SBL
560
60
42
60
SBL
580
80
56
80
SBL
5100
100
70
100
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
30
21
30
35
25
35
I
FSM
V
F
I
R
R
θ
JC
T
J
T
STG
0.55
175
A
0.70
0.5
33
3.0
-55--- + 150
-55--- + 150
0.85
V
mA
/W
at rated DC blocking voltage @T
C
=100
Typical thermal resistance
(Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
http://www.luguang.cn
mail:lge@luguang.cn

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SBL550 SBL5100 SBL530 SBL535 SBL540 SBL545 SBL560 SBL580
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