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SF801G

Description
4 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size228KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SF801G Overview

4 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB

SF801G-SF808G
8.0AMP. Glass Passivated Super Fast Rectifiers
TO-220AB
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
Mechanical Data
Case: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@T
C
= 100
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 4.0A
Maximum DC Reverse Current
@T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=100
o
C
Maximum Reverse Recovery Tim (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range T
J
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
SF
SF
SF
SF
SF
SF
SF
SF
801G 802G 83G 804G 805G 806G 807G 808G
Units
V
V
V
A
A
50
35
50
100 150 200 300 400 500 600
70 105 140 210 280 350 480
100 150 200 300 400 500 600
8.0
125
0.975
10
400
35
70
3.0
-65 to +150
-65 to +150
50
1.3
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range T
STG
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Thermal Resistance from Junction to Case Mounted on Heatsink Size of 2” x 3” x 0.25” Al-Plate.
http://www.luguang.cn
mail:lge@luguang.cn

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Description 4 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 4 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 4 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB 4 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 4 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB 4 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, SILICON, RECTIFIER DIODE, TO-220
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