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SFF1004G

Description
10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size211KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SFF1004G Overview

10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

SFF1001G-SFF1008G
Isolated10.0AMP. Glass Passivated Supper Fast Rectifiers
ITO-220AB
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
Mechanical Data
Case: ITO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
o
260 C/10 seconds.16”,(4.06mm) from case.
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SFF SFF SFF
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
o
@T
C
= 100 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current
o
@ T
A
=25 C at Rated DC Blocking Voltage
@ T
A
=100
o
C
Maximum Reverse Recovery Time
(Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
SFF
SFF
SFF
SFF
SFF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
100
70
100
150
105
150
200
140
200
10
300
210
300
400
280
400
500
350
500
600
420
600
125
0.975
10
400
35
70
2.0
-65 to +150
50
o
1.3
1.7
V
uA
uA
nS
pF
C/W
o
C
o
C
Cj
R
θJC
T
J
Storage Temperature Range
T
STG
-65 to +150
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2” x 3” x 0.25” Al-plate.
http://www.luguang.cn
mail:lge@luguang.cn

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