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BLF6G38-100_15

Description
WiMAX power LDMOS transistor
File Size130KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF6G38-100_15 Overview

WiMAX power LDMOS transistor

BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 2 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[2]
[1]
[2]
[3]
f
(MHz)
V
DS
P
L(AV)
P
L(M)
[1]
G
p
(V)
(W)
18.5
(W)
130
13
D
ACPR
885k
ACPR
1980k
(dBc)
(dBc)
65
[3]
(dB) (%)
3400 to 3600 28
21.5
47.5
[3]
P
L(M)
stands for peak output power.
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I
Dq
of 1050 mA:
Qualified up to a maximum V
DS
operation of 32 V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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