EEWORLDEEWORLDEEWORLD

Part Number

Search

MBR25150CT

Description
20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size231KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Compare View All

MBR25150CT Online Shopping

Suppliers Part Number Price MOQ In stock  
MBR25150CT - - View Buy Now

MBR25150CT Overview

20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR2535CT-MBR25150CT
25.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
2535
CT
2545
CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
o
T
C
=130 C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=130
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
I
F
=12.5A, Tc=25 C
I
F
=12.5A, Tc=125
o
C
o
I
F
=25A, Tc=25 C
o
I
F
=25A, Tc=125 C
Maximum Instantaneous Reverse Current @ Tc=25 C
at
R
ated
DC
Blocking Voltage Per Leg @ Tc=125
o
C
(Note 2)
Voltage Rate of Change, (Rated V
R
)
Typical Junction Capacitance
M
aximum
T
hermal
R
esistance
P
er
L
eg (
N
ote 3)
o
Maximum Ratings and Electrical Characteristics
MBR
2550
CT
MBR
2560
CT
MBR MBR MBR
2590 25100 25150
CT
CT
CT
Units
V
V
V
A
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
35
24
35
45
31
45
50
35
50
60
42
60
25
25
200
90
63
90
100
70
100
150
105
150
1.0
0.82
0.73
0.75
0.65
--
--
0.5
0.85
0.75
0.92
0.88
0.95
0.92
1.02
0.98
A
V
mA
mA
V/uS
pF
o
I
R
dV/dt
Cj
0.2
15
0.2
10
0.1
7.5
0.1
5
10,000
600
1.0
-65 to +150
-65 to +175
460
R
θJC
T
J
Operating Junction Temperature Range
Storage Temperature Range
T
STG
1. 2.0us Pulse Width, f=1.0 KHz
Notes:
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plat
e.
C/W
o
C
o
C
http://www.luguang.cn
mail:lge@luguang.cn

MBR25150CT Related Products

MBR25150CT MBR25100CT MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT
Description 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB 12.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 12.5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
Parts packaging code - TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB -
Manufacturer packaging code - TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 996  546  664  2343  750  21  11  14  48  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号