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MBR2535CT

Description
30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    Schottky diode   
File Size231KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBR2535CT Overview

30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR2535CT Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
Manufacturer packaging codeTO-220AB
MBR2535CT-MBR25150CT
25.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
2535
CT
2545
CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
o
T
C
=130 C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=130
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
I
F
=12.5A, Tc=25 C
I
F
=12.5A, Tc=125
o
C
o
I
F
=25A, Tc=25 C
o
I
F
=25A, Tc=125 C
Maximum Instantaneous Reverse Current @ Tc=25 C
at
R
ated
DC
Blocking Voltage Per Leg @ Tc=125
o
C
(Note 2)
Voltage Rate of Change, (Rated V
R
)
Typical Junction Capacitance
M
aximum
T
hermal
R
esistance
P
er
L
eg (
N
ote 3)
o
Maximum Ratings and Electrical Characteristics
MBR
2550
CT
MBR
2560
CT
MBR MBR MBR
2590 25100 25150
CT
CT
CT
Units
V
V
V
A
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
35
24
35
45
31
45
50
35
50
60
42
60
25
25
200
90
63
90
100
70
100
150
105
150
1.0
0.82
0.73
0.75
0.65
--
--
0.5
0.85
0.75
0.92
0.88
0.95
0.92
1.02
0.98
A
V
mA
mA
V/uS
pF
o
I
R
dV/dt
Cj
0.2
15
0.2
10
0.1
7.5
0.1
5
10,000
600
1.0
-65 to +150
-65 to +175
460
R
θJC
T
J
Operating Junction Temperature Range
Storage Temperature Range
T
STG
1. 2.0us Pulse Width, f=1.0 KHz
Notes:
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plat
e.
C/W
o
C
o
C
http://www.luguang.cn
mail:lge@luguang.cn

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Description 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 12.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 12.5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
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Manufacturer packaging code TO-220AB TO-220AB - TO-220AB TO-220AB TO-220AB -
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