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MBRF3060CT

Description
15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size253KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBRF3060CT Overview

15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB

MBRF3030CT-MBRF30100CT
Schottky Barrier Rectifiers
VOLTAGE RANGE: 30 -
100
V
CURRENT:
30
A
Features
High s urge capacity.
111
For us e in low voltage, high frequency inverters , free
wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
ITO-220AB
4.5± 0.2
10.2± 0.2
3.1
+0.2
-0.1
φ
3.3± 0.1
15.0± 0.5
16.5± 0.3
1
13.5± 0.5
PIN
2 3
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
Mechanical Data
Cas e:JEDEC
ITO-220AB,m
olded plas tic body
Polarity: As m arked
Pos ition: Any
Weight:
0.08ounce, 2.24 grams
2.6± 0.15
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
MBRF
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
3030CT 3035CT 3040CT 3045CT 3050CT 3060CT 3080CT 30100CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 105°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forward
voltage
(Note 1)
(I
F
=15A,T
C
=25
(I
F
=15A,T
C
=125
(I
F
=30A,T
C
=25
)
)
)
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
? 3.2± 0.2
2.6± 0.2
30
21
30
35
25
35
40
28
40
45
32
45
30
50
35
50
60
42
60
80
56
80
100
70
100
V
V
V
A
A
200
-
0.80
0.85
V
F
0.57
0.84
0.72
0.70
0.95
0.85
1.0
60
6.8
-
55
---- + 150
-
55
---- + 150
0.65
0.95
0.75
0.2
V
(I
F
=30A ,T
C
=125 )
@T
C
=25
@T
C
=125
Maximum reverse current
at rated DC blocking voltage
I
R
R
θJC
T
J
T
STG
mA
40
4.4
/W
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
http://www.luguang.cn
mail:lge@luguang.cn

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