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5962-01-141-9246

Description
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16,
Categorystorage    storage   
File Size303KB,5 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric Compare View All

5962-01-141-9246 Overview

Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16,

5962-01-141-9246 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntel
package instructionDIP, DIP16,.3
Reach Compliance Codecompliant
Maximum access time120 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T16
memory density16384 bit
Memory IC TypePAGE MODE DRAM
memory width1
Number of terminals16
word count16384 words
character code16000
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP16,.3
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
refresh cycle128
Filter level38535Q/M;38534H;883B
Maximum slew rate0.025 mA
surface mountNO
technologyMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

5962-01-141-9246 Related Products

5962-01-141-9246 ABSM33A-06.999MHZ-D-1-X 5962-01-208-8851
Description Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16, Parallel - Fundamental Quartz Crystal Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16,
Is it Rohs certified? incompatible conform to incompatible
Reach Compliance Code compliant compliant compli
Maximum operating temperature 125 °C 85 °C 125 °C
Minimum operating temperature -55 °C -40 °C -55 °C
surface mount NO YES NO
Maker Intel - Intel
package instruction DIP, DIP16,.3 - DIP, DIP16,.3
Maximum access time 120 ns - 150 ns
I/O type SEPARATE - SEPARATE
JESD-30 code R-XDIP-T16 - R-XDIP-T16
memory density 16384 bit - 16384 bi
Memory IC Type PAGE MODE DRAM - PAGE MODE DRAM
memory width 1 - 1
Number of terminals 16 - 16
word count 16384 words - 16384 words
character code 16000 - 16000
organize 16KX1 - 16KX1
Output characteristics 3-STATE - 3-STATE
Package body material CERAMIC - CERAMIC
encapsulated code DIP - DIP
Encapsulate equivalent code DIP16,.3 - DIP16,.3
Package shape RECTANGULAR - RECTANGULAR
Package form IN-LINE - IN-LINE
Certification status Not Qualified - Not Qualified
refresh cycle 128 - 128
Maximum slew rate 0.025 mA - 0.023 mA
technology MOS - MOS
Temperature level MILITARY - MILITARY
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal pitch 2.54 mm - 2.54 mm
Terminal location DUAL - DUAL

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