V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
DClin
=
=
=
=
=
=
4500
3000
30
1.17
0.31
2800
V
A
kA
V
mΩ
V
Gate turn-off Thyristor
5SGT 30J4502
PRELIMINARY
Doc. No. 5SYA 1215-03 Aug. 2000
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
The 5SGT 30J4502 is an 85 mm buffered layer, Transparent Emitter (non-shorted anode)
GTO with exceptionally low dynamic and static losses and gate drive requirements.
Housed in an industry-standard 108 mm wide housing, it is ideally suited for high reliability
applications such as Transportation and Medium Voltage Drives.
Blocking
V
DRM
V
RRM
I
DRM
I
RRM
V
DClink
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Permanent DC voltage for 100
FIT failure rate
≤
≤
4500 V
17 V
100 mA
50 mA
2800 V
V
D
= V
DRM
V
R
= V
RRM
V
GR
≥
2V
R
GK
=
∞
V
GR
≥
2V
-40
≤
T
j
≤
125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
(see Fig. 4)
F
m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
M
D
S
D
a
Weight
Surface creepage distance
Air strike distance
≥
≥
50 m/s
2
200 m/s
2
1.3 kg
33 mm
15 mm
min.
max.
36 kN
44 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5SGT 30J4502
GTO Data
On-state
I
TAVM
I
TRMS
I
TSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
I
2
t
Limiting load integral
1450 A
2280 A
30 kA
50 kA
2
2.88⋅10
6
A s
2
0.80⋅10
6
A s
Half sine wave, T
C
= 85 °C
t
P
t
P
t
P
t
P
I
T
I
T
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
3000 A
T
j
=
125°C
After surge:
V
D
= V
R
= 0V
V
T
V
T0
r
T
I
H
On-state voltage
Threshold voltage
Slope resistance
Holding current
2.10 V
1.17 V
0.31 mΩ
100 A
= 400 - 4000 A
T
j
=
125 °C
T
j
= 25 °C
Gate
V
GT
I
GT
V
GRM
I
GRM
Gate trigger voltage
Gate trigger current
Repetitive peak reverse voltage
Repetitive peak reverse current
1.2 V
1.0 A
17 V
20 mA
V
GR
= V
GRM
V
D
R
A
= 24 V
= 0.1
Ω
T
j
=
25 °C
Turn-on switching
di/dt
crit
Max. rate of rise of on-state
current
t
d
t
r
t
on(min)
E
on
Delay time
Rise time
Min. on-time
Turn-on energy per pulse
400 A/µs
800 A/µs
2.0 µs
4.5 µs
100 µs
2.00 Ws
f = 200Hz
f = 1Hz
V
D
=
I
T
=
I
T
= 2500 A,
T
j
= 125 °C
I
GM
= 25 A, di
G
/dt = 20 A/µs
0.5 V
DRM
T
j
2500 A
25 A
6 µF
=
125 °C
300 A/µs
20 A/µs
5
Ω
di/dt =
di
G
/dt =
R
S
=
I
GM
=
C
S
=
Turn-off switching
I
TGQM
Max controllable turn-off
current
t
s
t
f
t
off(min)
E
off
I
GQM
Storage time
Fall time
Min. off-time
Turn-off energy per pulse
Peak turn-off gate current
25.0 µs
3.0 µs
100 µs
6.5 Ws
1000 A
3000 A
V
DM
= V
DRM
C
S
V
D
T
j
= 6 µF
= ½ V
DRM
=
di
GQ
/dt =
L
S
V
DM
≤
=
40 A/µs
0.2 µH
V
DRM
40 A/µs
125 °C di
GQ
/dt =
I
TGQ
= I
TGQM
C
S
L
S
=
≤
6 µF R
S
0.2 µH
=
5
Ω
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000
page 2 of 6
5SGT 30J4502
Thermal
T
j
R
thJC
Storage and operating
junction temperature range
Thermal resistance
junction to case
R
thCH
Thermal resistance case to
heat sink
Analytical function for transient thermal
impedance:
22 K/kW
27 K/kW
12 K/kW
6 K/kW
3 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
-40...125°C
Z
thJC
(t) =
∑
4
i
1
5.4
1.2
2
4.5
0.17
3
1.7
0.01
4
0.4
0.001
R
i
(1 - e
- t /
τ
i
)
R
I
(K/kW)
τ
i
(s)
i
=
1
Fig. 1
Transient thermal impedance, junction to case.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000
page 3 of 6
5SGT 30J4502
Fig. 2
On-state characteristics
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000
page 4 of 6
5SGT 30J4502
Fig. 3
General current and voltage waveforms with GTO-specific symbols
Fig. 4
Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
page 5 of 6
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000
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