V
SM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
5200 V
1800 A
2830 A
29000 A
1.02 V
0.320 mΩ
Ω
Bi-Directional Control Thyristor
5STB 17N5200
Doc. No. 5SYA1036-03 Sep. 01
•
Two thyristors integrated into one wafer
•
Patented free-floating silicon technology
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number
V
SM
V
RM
I
SM
I
RM
dV/dt
crit
V
RM
is equal to V
SM
up to T
j
= 110°C
5STB 17N5200
5200 V
4400 V
5STB 17N5000
5000 V
4200 V
≤
400 mA
≤
400 mA
2000 V/µs
5STB 17N4600
4600 V
4000 V
Conditions
f = 5 Hz, t
p
= 10ms
f = 50 Hz,t
p
= 10ms
V
SM
V
RM
T
j
= 125°C
@ Exp. to 0.67xV
SM
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
2.9 kg
53 mm
22 mm
90 kN
81 kN
108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5STB 17N5200
On-state
I
TAVM
I
TRMS
I
TSM
I
2
t
Max. average on-state
t
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
1800 A
2830 A
29000 A
31000 A
4205 kA
2
s
3990 kA
2
s
V
T
V
T0
r
T
I
H
I
L
On-state voltage
Threshold voltage
Slope resistance
Holding current
1.68 V
1.02 V
0.320 mΩ
50-250 mA
25-150 mA
Latching current
100-500 mA
50-300 mA
T
j
T
j
T
j
T
j
= 25°C
= 125°C
= 25°C
= 125°C
tp
tp
tp
tp
I
T
I
T
=
=
=
=
=
=
10 ms T
j
= 125°C
8.3 ms After surge:
10 ms V
D
= V
R
= 0V
8.3 ms
2000 A
1000 - 3000 A
T
j
= 125°C
Half sine wave, T
C
= 70°C
Switching
di/dt
crit
Critical rate of rise of on-state
current
250 A/µs
500 A/µs
Cont. f = 50 Hz V
D
≤
0.67⋅V
DRM
, T
j
= 125°C
60 sec.
f = 50Hz
V
D
= 0.4⋅V
DRM
I
TRM
= 3000 A
I
FG
= 2 A, t
r
= 0.5 µs
I
FG
= 2 A, t
r
= 0.5 µs
t
d
t
q
Q
rr
Delay time
Turn-off time
≤
≤
min
max
3.0 µs
700 µs
V
D
≤
0.67⋅V
DRM
I
TRM
= 3000 A, T
j
= 125°C
dv
D
/dt = 20V/µs V
R
> 200 V, di
T
/dt = -1.5 A/µs
Recovery charge
4000 µAs
5200 µAs
Triggering
V
GT
I
GT
V
GD
I
GD
V
FGM
I
FGM
V
RGM
P
G
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Maximum gate power loss
≤
≤
≥
≥
2.6 V
400 mA
0.3 V
10 mA
12 V
10 A
10 V
3W
T
j
= 25°C
T
j
= 25°C
V
D
= 0.4⋅V
RM
V
D
= 0.4⋅V
RM
T
j
= 125°C
T
j
= 125°C
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 2 of 6
5STB 17N5200
Thermal
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
-40…125 °C
-40…150 °C
22.8 K/kW
22.8 K/kW
11.4 K/kW
R
thCH
Thermal resistance case to
heat sink
Analytical function for transient thermal
impedance:
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
4 K/kW
2 K/kW
Z
thJC
[K/kW]
15
180° sine:
add 1 K/kW
180° rectangular: add 1 K/kW
120° rectangular: add 1 K/kW
60° rectangular: add 2 K/kW
Z
thJC
(t) =
å
R
i
(1 - e
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
6.77
0.8651
2
2.51
0.1558
3
1.34
0.0212
n
- t/
τ
i
)
4
10
5
F
m
= 81..108 kN
Double-side cooling
0
0.001
BN1
0.78
0.0075
0.010
0.100
1.000
10.000
t [s]
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
VT
=
A
+
B
⋅
iT
+
C
⋅
ln(
iT
+
1)
+
D
⋅
IT
Valid for i
T
= 500 – 4000 A
A
1.309
B
0.00008
C
-0.125
D
0.026
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 3 of 6
5STB 17N5200
T
case
(°C)
130
Double-sided cooling
125
120
115
110
105
100
95
90
85
80
75
70
0
500
1000
1500
2000
2500
DC
180° rectangular
180° sine
120° rectangular
3000
I
TAV
(A)
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 4 of 6
5STB 17N5200
5STB 17N5200
Fig. 8 Gate trigger characteristics.
Q
rr
(µAs)
30000
Fig. 9 Max. peak gate power loss.
I
RM
(A)
10
3
800
700
600
500
400
300
20000
I
TRM
= 3000 A
T
j
= T
jmax
I
TRM
= 3000 A
T
j
= T
jmax
10
4
8000
7000
6000
5000
5STB 17N5200
4000
3000
200
10
2
5STB 17N5200
80
70
60
2000
1
2
3
4
5 6 7 8 910
30
20
-di
T
/dt (A/µs)
30
1
2
3
4
5 6 7 8 910
-di
T
/dt (A/µs)
20
30
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
1.3
f
2
(-di
T
/dt)
1.2
1.1
5STB 17N5200
1.0
0
4
8
12
16
20
-
di
T
/dt (A/µs)
24
28
32
Fig. 12 t
q
/t
q1
= f
1
(T
j
)
Fig. 13 t
q
/t
q1
= f
2
(-di
T
/dt)
Fig. 14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
•
f
1
(T
j
)
•
f
2
(-di
T
/dt)
•
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 5 of 6
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