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FMG3A

Description
Emitter common (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size52KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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FMG3A Overview

Emitter common (dual digital transistors)

FMG3A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G5
JESD-609 codee1
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
EMG3 / UMG3N / FMG3A
Transistors
Emitter common
(dual digital transistors)
EMG3 / UMG3N / FMG3A
Features
1) Two DTC143T chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMG3
0.5 0.5
1.0
1.6
0.22
(4)
(3)
(2)
(5)
0.13
1.2
1.6
(1)
Structure
Dual NPN digital transistor
(each with a single built in resistors)
ROHM : EMT5
Each lead has same dimensions
Abbreviated symbol : G3
(4)
(3)
The following characteristics apply to both the DTr
1
and
DTr
2
.
UMG3N
0.65 0.65
1.3
0.2
2.0
(2)
(5)
Equivalent circuit
0.15
1.25
2.1
(1)
0.5
0to0.1
EMG3 / UMG3N
(3)
R
1
DTr
2
(4)
(2)
(1)
R
1
=4.7kΩ
R
1
DTr
1
(5)
FMG3A
(3)
R
1
DTr
2
(2)
(4)
(5)
R
1
=4.7kΩ
R
1
DTr
1
(1)
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G3
FMG3A
0.95 0.95
1.9
0.8
0to0.1
0.3
(2)
(3)
0.7
(1)
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector EMG3, UMG3N
power
dissipation FMG3A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
˚C
˚C
Unit
0.15
1.6
2.8
V
V
V
mA
mW
(5)
(4)
0.3to0.6
Each lead has same dimensions
1
2
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G3
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1.1
2.9
0.9
Rev.A
1/2

FMG3A Related Products

FMG3A EMG3 UMG3N
Description Emitter common (dual digital transistors) Emitter common (dual digital transistors) Emitter common (dual digital transistors)
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code compli compli compli
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 100 100 100
JESD-609 code e1 e2 e2
Number of components 2 2 2
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu)
Transistor component materials SILICON - SILICON
Maker - ROHM Semiconductor ROHM Semiconductor

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