5082-0114 datasheet, PDF - EEWORLD Datasheet

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5082-0114: DescriptionStep Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon; CategoryDiscrete semiconductor diode; File Size88KB，3 Pages; ManufacturerHewlett Packard Co.

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Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon

5082-0114 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hewlett Packard Co.
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FREQUENCY MULTIPLIER
Minimum breakdown voltage	35 V
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	3.85 pF
Nominal diode capacitance	3.8 pF
Diode component materials	SILICON
Diode type	STEP RECOVERY DIODE
frequency band	ULTRA HIGH FREQUENCY TO KU BAND
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output frequency	26 GHz
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.5833 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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5082-0114 Related Products

	5082-0114	5082-0840	5082-0833	5082-0113	5082-0151
Description	Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon	Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon	Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon	Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon	Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Hewlett Packard Co.	Hewlett Packard Co.	Hewlett Packard Co.	Hewlett Packard Co.	Hewlett Packard Co.
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
application	FREQUENCY MULTIPLIER	FREQUENCY MULTIPLIER	FREQUENCY MULTIPLIER	FREQUENCY MULTIPLIER	FREQUENCY MULTIPLIER
Minimum breakdown voltage	35 V	15 V	25 V	35 V	15 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum diode capacitance	3.85 pF	0.6 pF	1.6 pF	4.85 pF	0.65 pF
Nominal diode capacitance	3.8 pF	0.6 pF	1.6 pF	4.8 pF	0.65 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	STEP RECOVERY DIODE	STEP RECOVERY DIODE	STEP RECOVERY DIODE	STEP RECOVERY DIODE	STEP RECOVERY DIODE
frequency band	ULTRA HIGH FREQUENCY TO KU BAND	ULTRA HIGH FREQUENCY TO KU BAND	ULTRA HIGH FREQUENCY TO KU BAND	ULTRA HIGH FREQUENCY TO KU BAND	ULTRA HIGH FREQUENCY TO KU BAND
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output frequency	26 GHz	26 GHz	26 GHz	26 GHz	26 GHz
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	0.5833 W	0.2917 W	0.2917 W	0.5833 W	0.2917 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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