BLF8G20LS-260A
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in an asymmetrical Doherty production test circuit.
Test signal
1-carrier W-CDMA
[1]
[1]
[2]
f
(MHz)
1805 to 1880
V
DS
(V)
28
P
L(AV)
(W)
50
G
p
(dB)
15.9
D
(%)
45.5
ACPR
(dBc)
29
[2]
V
DS
= 28 V; I
Dq
= 750 mA (main); V
GS(amp)peak
= 0.80 V.
Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Asymmetric design to achieve optimum efficiency across the band
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
the 1805 MHz to 1880 MHz frequency range
NXP Semiconductors
BLF8G20LS-260A
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1 (main)
drain2 (peak)
gate1 (main)
gate2 (peak)
source
[1]
Simplified outline
1
2
5
3
4
Graphic symbol
1
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G20LS-260A
-
earless flanged balanced ceramic package; 4 leads
Version
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS(amp)main
V
GS(amp)peak
T
stg
T
j
[1]
Parameter
drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
65
[1]
Max
65
+13
+13
+150
225
Unit
V
V
V
C
C
-
Continuous use at maximum temperature will affect reliability.
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
V
DS
= 28 V; I
Dq
= 750 mA (main);
V
GS(amp)peak
= 0.80 V; T
case
= 80
C
P
L
= 50 W
P
L
= 200 W
0.36
0.29
K/W
K/W
Typ
Unit
thermal resistance from junction
to case
Symbol Parameter
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 12 July 2013
2 of 15
NXP Semiconductors
BLF8G20LS-260A
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Main device
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
V
GS
= 0 V; I
D
= 1.44 mA
V
DS
= 10 V; I
D
= 144 mA
V
DS
= 28 V; I
D
= 750 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5.04 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.04 A
V
GS
= 0 V; I
D
= 2.2 mA
V
DS
= 10 V; I
D
= 220 mA
V
DS
= 28 V; I
D
= 1200 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.70 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
65
1.5
1.7
-
-
-
-
-
-
1.9
2.1
-
27
-
102
-
2.3
2.5
2.8
-
280
166
V
V
V
A
A
nA
S
m
Conditions
Min Typ
Max Unit
9.70 -
Peak device
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
65
1.5
1.7
-
-
-
-
-
-
1.9
2.1
-
41
-
66
-
2.3
2.5
2.8
-
280
112
V
V
V
A
A
nA
S
m
14.9 -
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f
1
= 1810 MHz; f
2
= 1875 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 750 mA (main); V
GS(amp)peak
= 0.80 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1805 MHz to 1880 MHz.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 50 W
P
L(AV)
= 50 W
P
L(AV)
= 50 W
P
L(AV)
= 50 W
Min
14.7
-
40
-
Typ
15.9
11
45.5
29
Max
-
7
-
24
Unit
dB
dB
%
dBc
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f = 1877.5 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 750 mA (main); V
GS(amp)peak
= 0.80 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1805 MHz to 1880 MHz.
Symbol Parameter
PAR
O
P
L(M)
BLF8G20LS-260A
Conditions
Min
6.4
257
Typ
7.0
300
Max Unit
-
-
dB
W
3 of 15
output peak-to-average ratio P
L(AV)
= 60 W
peak output power
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 12 July 2013
NXP Semiconductors
BLF8G20LS-260A
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLF8G20LS-260A is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 750 mA (main); V
GS(amp)peak
= 0.80 V; P
L
= 200 W (CW); f = 1805 MHz to
1880 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 750 mA (main); V
DS
= 28 V.
f
(MHz)
1810
1840
1880
1810
1840
1880
[1]
[2]
Z
S[1]
()
1.0
j3.7
1.0
j3.9
1.1
j4.0
1.0
j3.7
1.0
j3.9
1.1
j4.0
Z
L[1]
()
1.4
j4.1
1.4
j3.9
1.4
j3.6
2.6
j2.4
2.4 j2.8
2.3
j2.7
P
L[2]
(W)
172
167
162
114
126
120
D[2]
(%)
56.3
55.9
57.4
67
66
66
G
p[2]
(dB)
15.1
15.1
15.3
17.5
17.3
17.6
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; I
Dq
= 1200 mA (peak); V
DS
= 28 V.
f
(MHz)
1810
1840
1880
Z
S[1]
()
0.8
j3.7
0.7
j3.9
0.7
j4.0
Z
L[1]
()
1.8
j4.5
1.8
j4.3
1.7
j4.0
P
L[2]
(W)
240
238
233
D[2]
(%)
54
56
57
G
p[2]
(dB)
15.3
15.4
15.8
Maximum power load
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 12 July 2013
4 of 15
NXP Semiconductors
BLF8G20LS-260A
Power LDMOS transistor
Table 10. Typical impedance of peak device
…continued
Measured load-pull data of peak device; I
Dq
= 1200 mA (peak); V
DS
= 28 V.
f
(MHz)
1810
1840
1880
[1]
[2]
Z
S[1]
()
0.8
j3.7
0.7
j3.9
0.7
j4.0
Z
L[1]
()
2.6
j2.6
2.4
j2.4
2.3
j2.5
P
L[2]
(W)
176
162
163
D[2]
(%)
67
66
65
G
p[2]
(dB)
18.1
18.3
18.4
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; I
Dq
= 750 mA (main); V
DS
= 28 V.
f
(MHz)
1810
1840
1880
[1]
[2]
[3]
Z
S[1]
()
1.0
j3.7
1.0
j3.9
1.1
j4.0
Z
L[1]
()
1.4
j4.1
1.4
j3.8
1.3
j3.6
P
L[2]
(dBm)
52.38
52.23
52.08
D[3]
(%)
33.8
34.3
35.0
G
p[3]
(dB)
18.0
18.1
18.3
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 47 dBm.
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; I
Dq
= 750 mA (main); V
DS
= 28 V.
f
(MHz)
1810
1840
1880
[1]
[2]
[3]
Z
S[1]
()
1.0
j3.7
1.0
j3.9
1.1
j4.0
Z
L[1]
()
2.4
j2.6
2.8
j3.0
3.1
j2.7
P
L[2]
(dBm)
50.83
50.47
50.25
D[3]
(%)
47.3
50.2
50.9
G
p[3]
(dB)
20.2
20.8
21.2
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 47 dBm.
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 12 July 2013
5 of 15
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