1SMB5926-1SMB5956
3.0W Surface Mount Silicon Zener Diode
SMB/DO-214AA
Features
For surface mounted applications in order to
optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
High temperature soldering guaranteed:
o
260 C / 10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Mechanical Data
Case: Molded plastic over passivated junction
Polarity: Color Band denotes positive end
(cathode)
Standard packaging: 12mm tape
Weight: 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Type Number
DC Power Dissipation at T
L
=75
o
C,
measure at Zero Lead Length
Derate above 75
o
C
DC Power Dissipation @ T
A
=25
o
C
Derate above 25
o
C
Thermal Resistance from Junction-to-Lead
Thermal Resistance from Junction-to-Ambient
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θ
JL
R
θ
JA
T
J
, T
STG
40
550
4.4
25
226
-65 to + 150
mW/
o
C
mW
mW/
o
C
o
C/W
o
C/W
o
C
Value
3.0
Units
Watts
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)
and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be attached.
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mail:lge@luguang.cn
1SMB5926-1SMB5956
3.0W Surface Mount Silicon Zener Diode
ELECTRICAL CHARACTERISTICS
(TA=25
O
C
Device
(Note 1)
1SMB5926
1SMB5927
1SMB5928
1SMB5929
1SMB5930
1SMB5931
1SMB5932
1SMB5933
1SMB5934
1SMB5935
1SMB5936
1SMB5937
1SMB5938
1SMB5939
1SMB5940
1SMB5941
1SMB5942
1SMB5943
1SMB5944
1SMB5945
1SMB5946
1SMB5947
1SMB5948
1SMB5949
1SMB5950
1SMB5951
1SMB5952
1SMB5953
1SMB5954
1SMB5955
1SMB5956
Notes:
Device
Marking
Code
926B
927B
928B
929B
930B
931B
932B
933B
934B
935B
936B
937B
938B
939B
940B
941B
942B
943B
944B
945B
946B
947B
948B
949B
950B
951B
952B
953B
954B
955B
956B
Zener Voltage Range (Note 2)
V
z
@ I
zt
I
ZT
Nom (V) Min (V) Max (V)
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
10.45
11.4
12.35
14.25
15.2
17.1
19
20.9
22.8
25.65
28.5
31.35
34.2
37.05
40.85
44.65
48.45
53.2
58.9
64.6
71.25
77.9
6.45
95
1.4.5
114
123.5
142.5
152
171
190
11.55
12.6
13.65
15.75
16.8
18.9
21
23.1
25.2
28.35
31.5
34.65
37.8
40.95
45.15
49.35
53.55
58.8
65.1
71.4
78.75
86.1
95.55
105
11505
126
136.5
157.5
168
189
210
mA
34.1
31.2
28.8
25.0
23.4
20.8
18.7
17.0
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
unless otherwise noted)
I
ZM
I
ZTC
mA(dc)
136
125
115
100
93
83
75
66
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
10
9
8
7
Zener Impedance (Note 3)
Leakage Current
Z
ZK @
I
ZK
Z
ZT @
I
ZT
Ohms Ohms
mA
5.5
6.5
7
9
10
12
14
17.5
19
23
28
33
38
45
53
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1200
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R
uA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
VR
V
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
137
152
1. Tolerance and type number designation the type numbers listed indicate a tolerance of ±5%.
2. Zener voltage (VZ) measurement
Nominal Zener voltage is measured with the device junction in thermal equilibrium
o
with ambient temperature at 25 C.
3. Zener impedance (ZZ) derivation: ZZT and ZZK are measured by dividing the ac voltage
drop across the device by the ac current applied. The specified limits are for
IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
http://www.luguang.cn
mail:lge@luguang.cn
1SMB5926-1SMB5956
3.0W Surface Mount Silicon Zener Diode
RATINGS AND CHARACTERISTIC CURVES (1SMB5926 THRU 1SMB5956)
FIG.1- STEADY STATE POWER DERATING
P
D
,
MAXIMUM POWER DISSIPATION (WATTS)
FIG.2- MAXIMUM SURGE POWER
1000
P
PK
, PEAK SURGE POWER (WATTS)
6
5
500
300
200
100
4
3
T
L
2
50
30
20
1
T
A
0
0
25
50
75
o
100
125
150
10
0.1
0.2
0.5
1
2
5
10
20
50
100
T, TEMPERATURE( C)
PW, PULSE WIDTH (ms)
FIG.3- ZENER VOLTAGE - TO 12 VOLTAGES
10
O
VZ
,
TEMPERATURE COEFFICIENT (mV/
o
C)
O
VZ
,
TEMPERATURE COEFFICIENT (mV/
o
C)
FIG.4- ZENER VOLTAGE - 14 TO 200 VOLTAGES
200
8
6
4
2
0
-2
-4
2
V
Z
@ I
ZT
V
Z
@ I
ZT
100
70
50
30
20
4
6
8
10
12
10
10
20
30
50
70
100
200
V
Z
,
ZENER VOLTAGE (VOLTS)
V
Z
,
ZENER VOLTAGE (VOLTS)
FIG.5- VZ = 3.3 THRU 10 VOLTS
100
100
FIG.6- VZ = 12 THRU 82 VOLTS
I
Z
,
ZENER CURRENT (mA)
10
I
Z
,
ZENER CURRENT (mA)
10
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
V
Z
,
ZENER VOLTAGE (VOLTS)
0.1
0
10
20
30
40
50
60
70
80
90
100
V
Z
,
ZENER VOLTAGE (VOLTS)
http://www.luguang.cn
mail:lge@luguang.cn
1SMB5926-1SMB5956
3.0W Surface Mount Silicon Zener Diode
RATINGS AND CHARACTERISTIC CURVES (1SMB5926 THRU 1SMB5956)
FIG.7- EFFECT OF ZENER VOLTAGE
200
Z
Z
, DYNAMIC IMPEDANCE (OHMS)
FIG.8- EFFECT OF ZENER CURRENT
1000
Z
Z
, DYNAMIC IMPEDANCE (OHMS)
100
70
50
30
20
10
7
5
3
2
I
Z
(dc) = 1mA
500
200
100
50
20
10
5.0
2.0
1.0
0.5
1
2
5
10
20
T
J
= 25 C
I
Z
(rms)= 0.1 I
Z
(dc)
V
Z
= 150V
91V
62V
o
10mA
I
Z
(rms)= 0.1 I
Z
(dc)
20
30
50
70
100
22V
12V
50
100
20mA
5
7
10
6.8V
500
200
I
Z
,
ZENER CURRENT (mA)
I
Z
,
ZENER TEST CURRENT (mA)
FIG.9- CAPACITANCE CURVE
1000
10
FIG.10- TYPICAL PULSE RATING CURVE
P
PK
, PEAK POWER (kW)
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @
V
Z
/2
NONREPETITIVE, EXPONENTIAL
o
PULSE WAVEFORM, T
J
= 25 C
1
100
0.1
T
J
= 25 C
10
10
BREAKDOWN VOLTAGE (VOLTS)
o
0.01
100
0.01
0.1
Tp, PULSE WIDTH (ms)
1
10
FIG.11- PULSE WAVEFORM
120
120
FIG.12- PULSE WAVEFORM
8/20 s WAVEFORM
AS DEFINED BY ANSI C62.1
AND IEC 801-5,
10 s
Ippm, PEAK PULSE CURRENT (%)
100
80
Ippm, PEAK PULSE
CURRENT (%)
PEAK VALUE
I
ppm
T
A
= 25
o
C
PW (I
D
) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF I
pp-
100
0.9 I
PEAK
80
60
HALF VALUE - I
pp
/2
60
0.5 I
PEAK
40
10/1000 s WAVEFORM
AS DEFINED BY R.E.A.
t
d
40
20
20
0.1 I
PEAK
0
0
1
2
t, TIME (ms)
T=8 s
0
0
0.02
0.04
t, TIME (ms)
3
4
5
0.06
0.08
0.1
T
20 s
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