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B330

Description
3 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size175KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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B330 Overview

3 A, 30 V, SILICON, RECTIFIER DIODE

B320-B360
Surface Mount
Schottky Barrier
Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT:
3.0
A
Features
111
111
11
Plastic package has Underwriters Laborator
Flammability Classification 94V-0
DO - 214AB(SMC)
7.5± 0.25
3.0± 0.15
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250
o
C/10
1
seconds at terminals
2.4± 0.2
8.3± 0.2
Dimensions in millimeters
Mechanical Data
Case:JEDEC DO-214AB,molded plastic over
1111passivated
chip
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
0.203MAX
1.5± 0.25
0.25± 0.06
5.8± 0.3
For surface mounted applications
B320
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c
sine-w ave superimposed on rated load(JEDEC
c
Method)
Maximum instantaneous forw ard voltage at
v
3.0A(NOTE.1)
Maximum DC reverse current @T
A
=25
o
C
at rated DC blockjing voltage(NOTE1) @T
A
Typical thermal resitance (NOTE2)
Operating junction and storage temperature range
Storage temperature range
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm
2
)copper pad areas
B330
30
21
30
B340
40
28
40
3.0
100.0
B350
50
35
50
B360
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
=100
o
C
20
14
20
0.50
0.5
20
0.70
V
mA
R
θ
JA
R
θ
JL
T
STG
T
J
50.0
10.0
-55--- +150
-55--- +125
o
C/W
o
C
C
o
http://www.luguang.cn
mail:lge@luguang.cn

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B330 B320 B340 B350 B360
Description 3 A, 30 V, SILICON, RECTIFIER DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE
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