B320-B360
Surface Mount
Schottky Barrier
Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT:
3.0
A
Features
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111
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111
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11
Plastic package has Underwriters Laborator
Flammability Classification 94V-0
DO - 214AB(SMC)
7.5± 0.25
3.0± 0.15
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250
o
C/10
1
seconds at terminals
2.4± 0.2
8.3± 0.2
Dimensions in millimeters
Mechanical Data
◇
◇
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Case:JEDEC DO-214AB,molded plastic over
1111passivated
chip
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
0.203MAX
1.5± 0.25
0.25± 0.06
5.8± 0.3
For surface mounted applications
B320
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c
sine-w ave superimposed on rated load(JEDEC
c
Method)
Maximum instantaneous forw ard voltage at
v
3.0A(NOTE.1)
Maximum DC reverse current @T
A
=25
o
C
at rated DC blockjing voltage(NOTE1) @T
A
Typical thermal resitance (NOTE2)
Operating junction and storage temperature range
Storage temperature range
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm
2
)copper pad areas
B330
30
21
30
B340
40
28
40
3.0
100.0
B350
50
35
50
B360
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
=100
o
C
20
14
20
0.50
0.5
20
0.70
V
mA
R
θ
JA
R
θ
JL
T
STG
T
J
50.0
10.0
-55--- +150
-55--- +125
o
C/W
o
C
C
o
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mail:lge@luguang.cn
B320-B360
Surface Mount
Schottky Barrier
Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
FIG.2-- PEAK FORWARD SURGE CURRENT
100
B320-B360
Resistive or
inductive Load
PEAK FORWARD SURGE
CURRENT,AMPERES
4.0
8.3ms Single Half Sine-Wave
(JEDEC Method)
80
3.0
P.C.B.MOUNTED ON
0.55"X0.55"(14.0X14.0mm)
COPPERPAD AREAS
60
2.0
40
1.0
20
0
50
60
70
80
90 100 110 120 130 140
150 160
0
1
10
100
AMBIENT TEMPERATURE
℃
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
NUMBER OF CYCLES AT 60H
Z
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
20
10
T
J
=125 C
0
30.0
T
J
=125 C
10.0
T
J
=150
O
C
Puise Width=300 S
1%DUTY CYCLE
O
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
1
0
T
J
=75 C
1
0.1
B320-B340
B350-B360
0.1
T
J
=25 C
O
0.01
T
J
=25 C
0
0.01
0
B320-B340
B350-B360
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACLTANCE pF
PERCENT OF RATED PEAK REVERSE VOLTAGE,
％
FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE
1000
TRANSIENT THERMAL
IMPEDANCE
O
C/W
100
T
J
=25
O
C
f=1.0MHz
Vsig=50mVp-p
100
10
100
1
B320-B340
B350-B360
10
0.1
1.0
10
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATION,SEC
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mail:lge@luguang.cn
Microcontroller MCU
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