B520C-B560C
Surface Mount
Schottky Barrier
Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT:
5.0
A
Features
◇
111
◇
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111
◇
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11
Plastic package has Underwriters Laborator
Flammability Classification 94V-0
For surface mounted applications
DO - 214AB(SMC)
7.5± 0.25
3.0± 0.15
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
Low power loss,high effciency
For use in low voltage high frequency inverters,free
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250
o
C/10
1
seconds at terminals
2.4± 0.2
8.3± 0.2
High current capability,low forward voltage drop
Mechanical Data
◇
◇
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Case:JEDEC DO-214AB,molded plastic over
1111passivated
chip
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
B520C
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c
sine-w ave superimposed on rated load(JEDEC
c
Method)
Maximum instantaneous forw ard voltage at
v
5.0A(NOTE.1)
Maximum DC reverse current @T
A
=25
o
C
at rated DC blockjing voltage(NOTE1) @T
A
Typical thermal resitance (NOTE2)
Operating junction and storage temperature range
Storage temperature range
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm
2
)copper pad areas
B530C
30
21
30
0.203MAX
1.5± 0.25
0.25± 0.06
5.8± 0.3
B540C
40
28
40
5.0
175.0
B550C
50
35
50
B560C
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
=100
o
C
20
14
20
0.50
0.5
20
0.70
V
mA
R
θ
JA
R
θ
JL
T
STG
T
J
-65--- +150
50.0
10.0
-65--- +150
-65--- +150
o
C/W
o
C
C
o
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mail:lge@luguang.cn
B520C-B560C
Surface Mount
Schottky Barrier
Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
FIG.2-- PEAK FORWARD SURGE CURRENT
8.0
PEAK FORWARD SURGE
CURRENT,AMPERES
B520C-B540C
B550C-B560C
Resistive or
inductive Load
200
175
150
125
100
75
50
25
0
1
5
10
50
100
T
J
=T
J
MAX.
8.3ms Single Half Sine-Wave
(JEDEC Method)
6.0
P.C.B.MOUNTED ON
0.55"X0.55"(14.0X14.0mm)
COPPERPAD AREAS
4.0
2.0
0
50
60
70
80
90 100 110 120 130 140
150 160
AMBIENT TEMPERATURE
℃
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
20
10
T
J
=125 C
0
30.0
T
J
=125 C
10.0
T
J
=150
O
C
Puise Width=300 S
1%DUTY CYCLE
O
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
1
0
T
J
=75 C
1
0.1
B520C-B540C
B550C-B560C
0.1
T
J
=25 C
O
0.01
T
J
=25 C
0
0.01
0
B520C-B540C
B550C-B560C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACLTANCE pF
PERCENT OF RATED PEAK REVERSE VOLTAGE,
％
FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE
1000
TRANSIENT THERMAL
IMPEDANCE
O
C/W
100
T
J
=25
O
C
f=1.0MHz
Vsig=50mVp-p
100
10
100
1
B520C-B540C
B550C-B560C
10
0.1
1.0
10
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATION,SEC
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mail:lge@luguang.cn
Embedded System
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