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B540C

Description
5 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size175KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

B540C Overview

5 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB

B540C Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionDO-214AB, 2 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current5 A
Maximum non-repetitive peak forward current250 A
B520C-B560C
Surface Mount
Schottky Barrier
Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT:
5.0
A
Features
111
111
11
Plastic package has Underwriters Laborator
Flammability Classification 94V-0
For surface mounted applications
DO - 214AB(SMC)
7.5± 0.25
3.0± 0.15
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
Low power loss,high effciency
For use in low voltage high frequency inverters,free
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250
o
C/10
1
seconds at terminals
2.4± 0.2
8.3± 0.2
High current capability,low forward voltage drop
Mechanical Data
Case:JEDEC DO-214AB,molded plastic over
1111passivated
chip
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
B520C
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c
sine-w ave superimposed on rated load(JEDEC
c
Method)
Maximum instantaneous forw ard voltage at
v
5.0A(NOTE.1)
Maximum DC reverse current @T
A
=25
o
C
at rated DC blockjing voltage(NOTE1) @T
A
Typical thermal resitance (NOTE2)
Operating junction and storage temperature range
Storage temperature range
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm
2
)copper pad areas
B530C
30
21
30
0.203MAX
1.5± 0.25
0.25± 0.06
5.8± 0.3
B540C
40
28
40
5.0
175.0
B550C
50
35
50
B560C
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
=100
o
C
20
14
20
0.50
0.5
20
0.70
V
mA
R
θ
JA
R
θ
JL
T
STG
T
J
-65--- +150
50.0
10.0
-65--- +150
-65--- +150
o
C/W
o
C
C
o
http://www.luguang.cn
mail:lge@luguang.cn

B540C Related Products

B540C B520C B530C B550C B560C
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