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ES3G

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
CategoryDiscrete semiconductor    diode   
File Size222KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB

ES3G Parametric

Parameter NameAttribute value
Parts packaging codeSMC
Manufacturer packaging codeSMC
ES3A-ES3J
3.0AMPS Surface Mount Super Fast Rectifiers
SMC/DO-214AB
Features
Glass passivated junction chip
For surface mounted applications
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Super fast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
o
C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Weight: 0.21 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
ES ES ES ES
Type Number
3A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) @T
L
= 100
o
C
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=100
o
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes:
3B
3C
3D
ES
3F
ES
3G
ES
3H
ES
3J
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
R
θJL
T
J
50
35
50
100 150 200 300 400 500 600
70
105 140 210 280 350 420
100 150 200 300 400 500 600
3.0
100
0.95
10
500
35
45
47
12
-55 to +150
-55 to +150
30
o
1.3
1.7
V
uA
uA
nS
pF
C
/W
o
o
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Units Mounted on P.C.B. with 0.6” x 0.6”(16mm x 16mm) Copper Pad Areas
C
C
http://www.luguang.cn
- 184
mail:lge@luguang.cn

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