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5R3SS

Description
Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, DO-4,
CategoryDiscrete semiconductor    diode   
File Size165KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

5R3SS Overview

Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, DO-4,

5R3SS Parametric

Parameter NameAttribute value
MakerSSDI
Reach Compliance Codecompliant
ECCN codeEAR99
applicationHYPER FAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
GuidelineMIL-19500
Maximum repetitive peak reverse voltage50 V
Maximum reverse current100 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2R3S THRU 20R3S
Part Number/Ordering Information
1/
__
R3S
__
Screening
3/
Family/Voltage
2 = 20V
3 = 30V
4 = 40V
5 = 50V
7 = 70V
10 = 100V
12 = 125V
15 = 150V
20 = 200V
Designer’s Data Sheet
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
8 AMPS
20 – 200 VOLTS
35 nsec
HYPER FAST RECTIFIER
Features
:
Hyper Fast Recovery: 35nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
Hermetically Sealed Package
Metalurgically Bonded Construction
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
2/
2R3S
3R3S
4R3S
5R3S
7R3S
10R3S
12R3S
15R3S
20R3S
Symbol
Value
20
30
40
50
70
100
125
150
200
8
200
-65 to +175
1.5
DO-4:
Units
Peak Repetitive Reverse Voltage
V
RRM
V
RWM
V
R
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
Io
I
FSM
T
OP
&
T
STG
R
θJC
Amps
Amps
ºC
ºC/W
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
3/ Screened to MIL-PRF-19500.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0029D
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