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BZT03C82

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size133KB,4 Pages
ManufacturerFRONTIER
Websitehttp://www.frontierusa.com/
Download Datasheet View All

BZT03C82 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS
BZT03C6V2 THRU BZT03C270
FEATURES
PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY
FLAMMABILITY CLASSIFICATION 94V-0
EXCELLENT CLAMPING CAPABILITY
LOW ZENER IMPEDANCE
FAST RESPONSE TIME: TYPICALLY LESS THAN 1.0 ps FROM
0 VOLTS TO BV MIN
HIGH TEMPERATURE SOLDERING GUARANTEED:260°C/10S
/.375” (9.5mm) LEAD LENGTH/5LBS., (2.3KG) TENSION
MECHANICAL DATA
CASE: MOLDED PLASTIC, DO15, DIMENSIONS
IN INCHES AND (MILLIMETERS)
TERMINALS: AXIAL LEADS, SOLDERABLE PER MIL-STD-202,
METHOD 208
POLARITY: COLOR BAND DENOTED CATHODE EXCEPT
BIPOLAR
WEIGHT: 0.4 GRAMS
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
.300(7.6)
.230(5.8)
.140(3.6)
.104(2.6)
1.0(25.4)
MIN
ABSOLUTE MAXIMUM RATINGS
Tj = 25℃
RATINGS
POWER DISSIPATION
TEST CONDITIONS
l=10mm;T
L
=25℃
Tamb=25℃
REPETITIVE PEAK REVERSE POWER DISSIPATION
NON REPETITIVE PEAK SURGE POWER DISSIPATION
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
MAXIMUM THERMAL RESISTANCE
Tj = 25℃
RATINGS
JUNCTION AMBIENT
TEST CONDITIONS
l=10mm;T
L
=CONSTANT
ON PC BOARD WITH SPACING 25mm
SYMBOL
R
th
JA
VALUE
46
100
UNITS
K/W
P
ZRM
Tp=100us;Tj=25℃
P
ZSM
T
J
T
STG
SYMBOL
P
V
VALUE
3.25
1.30
10
600
175
- 55 TO + 175
UNITS
W
W
W
W
ELECTRICAL CHARACTERISTICS
Tj = 25℃
RATINGS
FORWARD VOLTAGE
I
F
=0.5A
TEST CONDITIONS
SYMBOL
V
F
VALUE
1.2
UNITS
V
BZT03C6V2 THRU BZT03C270
Page: 1
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