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BP15-005

Description
4 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerFRONTIER
Websitehttp://www.frontierusa.com/
Download Datasheet Parametric Compare View All

BP15-005 Overview

4 A, SILICON, BRIDGE RECTIFIER DIODE

BP15-005 Parametric

Parameter NameAttribute value
MakerFRONTIER
Reach Compliance Codeunknow
Minimum breakdown voltage50 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-MUFM-D4
Maximum non-repetitive peak forward current300 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
15A HIGH CURRENT SILICON BRIDGE RECTIFIERS
BP15-005 THRUBP15-10
FEATURES
CURRENT RATING 15A
REVERSE VOLTAGE RATING UP TO 1000V
TYPICAL IR LESS THAN 1μA
HIGH TEMPERATURE SOLDERING GUARANTEED:
260°C /10 SECOND
HOLE FOR
No.10 SCREW
0.2〞 (5.08)diam.
1.13(28.7)
1.12(28.4)
0.652
(16.6)
HOLE FOR
No.10 SCREW
0.2〞 (5.08)diam.
0.728(18.5)
0.689(17.5)
0.657(16.7)
0.618(15.7)
1.13(28.7)
1.12(28.4)
0.469(11.90)
0.429(10.90)
MECHANICAL DATA
CASE: METAL HEAT SINK CASE, ELECTRICALLY INSULATED
TERMINALS: UNIVERSAL .25” (6.3mm) FAST ON
0.094
DIMENSIONS IN INCHES AND (MILLIMETERS)
(2.4)
MOUNTING METHOD: BOLT DOWN ON HEAT SINK WITH
diam
SILICON THERMAL COMPOUND BETWEEN BRIDGE AND
MOUNTING SURFACE FOR MAXIMUM HEAT TRANSFER
EFFICIENCY
H*
0.442(11.23)
WEIGHT: 20 GRAMS
0.432(10.97)
0.565(14.35)
0.525(13.35)
0.752(19.10)
0.673(17.10)
0.25
(6.35)
0.042(1.07)
0.038(0.97)
I*
1.00(25.40)
0.90(22.86)
L*
H*
0.442(11.23)
0.432(10.97)
1.200
(30.5) MIN
DIM
H*
I*
L*
MIN
0.295(7.5)
0.74(18.80)
1.09(27.89)
MAX
0.311(7.9)
0.84(21.30)
-
REMARK
SUFFIX “S” THIN CASE
SUFFIX “S” THIN CASE
SUFFIX “S” THIN CASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS, RATINGS AT 25°C AMBIENT TEMPERATURES UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED OUTPUT
CURRENT AT TC=55°C
PEAK FORWARD SURGE CURRENT SINGLE SINE-WAVE
SUPERIMPOSED ON RATED LOAD
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
SYMBOL BP15-005 BP15-01 BP15-02 BP15-04 BP15-06 BP15-08 BP15-10 UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
T
STG
T
OP
50
35
50
100
70
100
200
140
200
400
280
400
15.0
300
- 55 TO + 175
- 55 TO + 175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
MAXIMUM INSTANTANEOUS FORWARD VOLTAGE PER
BRIDGE ELEMENT AT SPECIFIED CURRENT
MAXIMUM REVERSE DC CURRENT AT RATED DC
BLOCKING VOLTAGE PER ELEMENT
NOTE: Suffix No. Versus Different Cases and Terminals
CASE
SUFFIX No
TERMINAL
FAST ON TERMINALS
WIRE LEAD TERMINALS
IN LINE PIN CONFIGURATION
NORMAL METAL CASE THIN METAL CASE
NO SUFFIX
W
S
WS
SYMBOL BP15-005 BP15-01 BP15-02 BP15-04 BP15-06 BP15-08 BP15-10 UNITS
V
F
I
R
1.1
10
V
μA
NORMAL PLASTIC
CASE ALUMINUM BASE
P
PW
L
THIN PLASTIC
CASE ALUMINUM BASE
PS
PWS
LS
BP15-005 THRU BP15-10
Page: 1

BP15-005 Related Products

BP15-005 BP15-02 BP15-08 BP15-10
Description 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE
Maker FRONTIER FRONTIER FRONTIER FRONTIER
Reach Compliance Code unknow unknow unknow unknow
Minimum breakdown voltage 50 V 200 V 800 V 1000 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-MUFM-D4 R-MUFM-D4 R-MUFM-D4 R-MUFM-D4
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 4 A 4 A 4 A 4 A
Package body material METAL METAL METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 200 V 800 V 1000 V
Maximum reverse current 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA
surface mount NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER

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