K4T1G164QQ-HPF7 datasheet, PDF

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K4T1G164QQ-HPF7: DescriptionDDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84; Categorystorage storage; File Size795KB，42 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4T1G164QQ-HPF7 Overview

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84

K4T1G164QQ-HPF7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	FBGA, BGA84,9X15,32
Reach Compliance Code	unknown
Maximum access time	0.4 ns
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	84
word count	67108864 words
character code	64000000
organize	64MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	4,8
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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K4T1G164QQ

Industrial

DDR2 SDRAM

1Gb Q-die DDR2 SDRAM Specification

84FBGA with Lead-Free & Halogen-Free

(RoHS compliant)

Industrial temp. -40’c to 95’c

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure couldresult in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

1 of 44

Rev. 1.3 December 2008

K4T1G164QQ

Industrial

DDR2 SDRAM

Table of Contents

1.0 Ordering Information ................................................................................................................... 4

2.0 Key Features ................................................................................................................................ 4

3.0 Package Pinout/Mechanical Dimension & Addressing ............................................................ 5

3.1 x16 package pinout (Top View) : 84ball FBGA Package

..................................................................... 5

3.2 FBGA Package Dimension (x16)

..................................................................................................... 6

4.0 Input/Output Functional Description ......................................................................................... 7

5.0 DDR2 SDRAM Addressing .......................................................................................................... 8

6.0 Absolute Maximum DC Ratings .................................................................................................. 9

7.0 AC & DC Operating Conditions .................................................................................................. 9

7.1 Recommended DC Operating Conditions (SSTL - 1.8)

....................................................................... 9

7.2 Operating Temperature Condition

................................................................................................ 10

7.3 Input DC Logic Level

................................................................................................................... 10

7.4 Input AC Logic Level

................................................................................................................... 10

7.5 AC Input Test Conditions

............................................................................................................ 10

7.6 Differential input AC logic Level

................................................................................................... 11

7.7 Differential AC output parameters

................................................................................................ 11

8.0 ODT DC electrical characteristics ............................................................................................ 11

9.0 OCD default characteristics ...................................................................................................... 12

10.0 IDD Specification Parameters and Test Conditions ............................................................. 13

11.0 DDR2 SDRAM IDD Spec Table ................................................................................................ 15

12.0 Input/Output capacitance ........................................................................................................ 16

13.0 Electrical Characteristics & AC Timing for DDR2-800/667 ................................................... 16

13.1 Refresh Parameters by Industrial temperature Device Density

....................................................... 16

13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

............................................. 16

............................................................................................ 17

14.0 General notes, which may apply for all AC parameters ....................................................... 19

15.0 Specific Notes for dedicated AC parameters ........................................................................21

13.3 Timing Parameters by Speed Grade

2 of 44

Rev. 1.3 December 2008

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