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K7A801809A-PC20

Description
Standard SRAM, 512KX18, 3.1ns, CMOS, PQFP100
Categorystorage    storage   
File Size538KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
Download Datasheet Parametric View All

K7A801809A-PC20 Overview

Standard SRAM, 512KX18, 3.1ns, CMOS, PQFP100

K7A801809A-PC20 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionQFP, QFP100,.63X.87
Reach Compliance Codecompliant
Maximum access time3.1 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
memory density9437184 bit
Memory IC TypeSTANDARD SRAM
memory width18
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum standby current0.05 A
Minimum standby current3.14 V
Maximum slew rate0.46 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
K7A803609A
K7A801809A
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
1.0
History
Initial draft
1. Final spec Release.
Draft Date
May. 24 . 2000
July. 03. 2000
Remark
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2000
Rev 1.0

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