FDC5661N_F085 N-Channel Logic Level PowerTrench
®
MOSFET
October 2008
FDC5661N_F085
®
N-Channel Logic Level PowerTrench MOSFET
60V, 4A, 60mΩ
Features
R
DS(on)
= 47mΩ at V
GS
= 10V, I
D
= 4.3A
R
DS(on)
= 60mΩ at V
GS
= 4.5V, I
D
= 4A
Typ Q
g(TOT)
= 14.5nC at V
GS
= 10V
Low Miller Charge
Qualified to AEC Q101
RoHS Compliant
tm
Applications
DC/DC converter
Motor Drives
©2008
Fairchild Semiconductor Corporation
FDC5661N_F085 Rev. A
1
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Drain to Source Voltage
V
DSS
V
GS
I
D
P
D
Gate to Source Voltage
Drain Current Continuous (V
GS
= 10V)
Pulsed
Power Dissipation
Parameter
Ratings
60
±20
4.3
20
1.6
-55 to +150
Units
V
V
A
W
o
C
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
30
78
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
.661N
Device
FDC5661N_F085
Package
SSOT-6
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250μA, V
GS
= 0V
V
DS
= 48V,
V
GS
= 0V
V
GS
= ±20V
T
A
= 150 C
o
60
-
-
-
-
-
-
-
-
1
250
±100
V
μA
nA
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250μA
I
D
= 4.3A, V
GS
= 10V
Drain to Source On Resistance
I
D
= 4A, V
GS
= 4.5V
I
D
= 4.3A, V
GS
= 10V
T
J
= 150
o
C
1
-
-
-
2.0
38
46
69
3
47
60
86
mΩ
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0 to 10V
V
DD
= 30V
I
D
= 4.3A
-
-
-
-
-
-
-
763
68
36
2.6
14.5
2.4
2.9
-
-
-
-
19
-
-
pF
pF
pF
Ω
nC
nC
nC
FDC5661N_F085 Rev. A
2
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench
®
MOSFET
Electrical Characteristics
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 30V, I
D
= 4.3A
V
GS
= 10V, R
GS
= 6Ω
-
-
-
-
-
-
-
7.2
1.6
19.3
3.1
-
17.6
-
-
-
-
36
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1:
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 4.3A
I
SD
= 2.1A
I
SD
= 4.3A, dI
SD
/dt = 100A/μs
-
-
-
-
0.8
0.8
18.4
10.0
1.25
1.0
24
13
V
ns
nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDC5661N_F085 Rev. A
3
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench
®
MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
I
D
, DRAIN CURRENT (A)
5
4
3
2
V
GS
= 4.5V
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
o
C)
T
A
, AMBIENT TEMPERATURE(
150
V
GS
= 10V
1
0
25
R
θ
JA
= 78 C/W
o
50
75
100
125
T
A
, AMBIENT TEMPERATURE(
o
C)
150
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
SINGLE PULSE
0.01
10
-3
R
θ
JA
= 78 C/W
o
10
-2
Figure 3. Normalized Maximum Transient Thermal Impedance
100
V
GS
= 10V
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-1
0
1
10
2
10
3
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
C
125
I
DM
,
PEAK CURRENT (A)
10
SINGLE PULSE
R
θ
JA
= 78 C/W
o
1
-3
10
10
-2
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-1
0
1
10
2
10
3
Figure 4. Peak Current Capability
FDC5661N_F085 Rev. A
4
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench
®
MOSFET
Typical Characteristics
100
I
D
, DRAIN CURRENT (A)
10us
100us
20
I
D
, DRAIN CURRENT (A)
16
12
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
10
1
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
o
TA = 25 C
T
J
= 150
o
C
8
4
0
T
J
= 25
o
C
T
J
= -55
o
C
0.1
100ms
1s
DC
0.01
0.01
0.1
1
10
100 300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Forward Bias Safe Operating Area
20
V
GS
= 10V
Figure 6. Transfer Characteristics
120
I
D
, DRAIN CURRENT (A)
16
12
8
4
PULSE DURATION = 80
μ
s
V
GS
= 5V DUTY CYCLE = 0.5% MAX
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 3.5V
V
GS
= 6V
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω
)
I
D
=
4.3A PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
90
T
J
= 150
o
C
60
T
J
= 25
o
C
V
GS
= 3V
0
30
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 4.3A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-80
V
GS
=
V
DS
I
D
= 250
μ
A
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE
(
o
C
)
160
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE(
o
C)
160
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDC5661N_F085 Rev. A
5
www.fairchildsemi.com
Buy&Sell
京公网安备 11010802033920号
EEWORLD
