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MMG3013NT1_12

Description
Heterojunction Bipolar Transistor
File Size340KB,15 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet View All

MMG3013NT1_12 Overview

Heterojunction Bipolar Transistor

Freescale Semiconductor
Technical Data
Document Number: MMG3013NT1
Rev. 7, 2/2012
Broadband High Linearity Amplifier
MMG3013NT1
The MMG3013NT1 is a general purpose amplifier that is internally input
matched and internally output matched. It is designed for a broad range of
Class A, small--signal, high linearity, general purpose applications. It is
suitable for applications with frequencies from 0 to 6000 MHz such as
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small--signal RF.
Features
Frequency: 0--6000 MHz
P1dB: 20.5 dBm @ 900 MHz
Small--Signal Gain: 20 dB @ 900 MHz
Third Order Output Intercept Point: 36 dBm @ 900 MHz
Single 5 Volt Supply
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Package
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
0-
-6000 MHz, 20 dB
20.5 dBm
InGaP HBT
12
3
CASE 1514-
-02, STYLE 1
SOT-
-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Symbol
G
p
IRL
ORL
P1dB
OIP3
900
MHz
20
--17
--11
20.5
36
2140
MHz
17
--19
--9
20.5
34
3500
MHz
14.5
--15
--12
19
32
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
300
12
--65 to +150
150
Unit
V
mA
dBm
°C
°C
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
CC
= 5 Vdc, T
A
= 25°C, 50 ohm system.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 89°C, 5 Vdc, 90 mA, no RF applied
Symbol
R
θJC
Value
(3)
42
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.
MMG3013NT1
1
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
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