EN25Q128-104WIP datasheet, PDF

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EN25Q128-104WIP: DescriptionFLASH 2.7V PROM; Categorystorage storage; File Size1MB，57 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/; Environmental Compliance

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EN25Q128-104WIP Overview

FLASH 2.7V PROM

EN25Q128-104WIP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Eon
package instruction	HVSON, SOLCC8,.25
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum clock frequency (fCLK)	104 MHz
Data retention time - minimum	20
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8
length	6 mm
memory density	134217728 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	8
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX8
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	0.8 mm
Serial bus type	SPI
Maximum standby current	0.00002 A
Maximum slew rate	0.028 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
type	NOR TYPE
width	5 mm
write protect	HARDWARE/SOFTWARE

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EN25Q128

128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

FEATURES

•

Single power supply operation

- Full voltage range: 2.7-3.6 volt

•

Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

•

128 M-bit Serial Flash

- 128 M-bit/16,384 K-byte/65,536 pages

- 256 bytes per programmable page

•

Standard, Dual or Quad SPI

Standard SPI: CLK, CS#, DI, DO, WP#

Dual SPI: CLK, CS#, DQ

, DQ

, WP#

Quad SPI: CLK, CS#, DQ

, DQ

High performance

104MHz clock rate for Standard SPI

80MHz clock rate for two data bits

50MHz clock rate for four data bits

•

Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

•

High performance program/erase speed

Page program time: 0.8ms typical

Sector erase time: 50ms typical

Block erase time 200ms typical

Chip erase time: 45 seconds typical

•

Lockable 512 byte OTP security sector

•

Minimum 100K endurance cycle

•

Package Options

8 contact VDFN (5x6mm)

8 contact VDFN (6x8mm)

16 pins SOP 300mil body width

24 balls TFBGA (6x8mm)

All Pb-free packages are RoHS compliant

•

Low power consumption

- 12 mA typical active current

- 1

μA

typical power down current

•

Uniform Sector Architecture:

4096 sectors of 4-Kbyte

256 blocks of 64-Kbyte

Any sector or block can be erased individually

•

Industrial and Automotive temperature Range

GENERAL DESCRIPTION

The EN25Q128 is a 128 Megabit (16,384K-byte) Serial Flash memory, with advanced write protection

mechanisms. The EN25Q128 supports the standard Serial Peripheral Interface (SPI), and a high

performance Dual output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select, Serial

(DI), DQ

(DO), DQ

(WP#) and DQ

(NC). SPI clock frequencies of up to 80MHz are supported

allowing equivalent clock rates of 160MHz (80MHz x 2) for Dual Output when using the Dual Output

Fast Read instructions, and SPI clock frequencies of up to 50MHz are supported allowing equivalent

clock rates of 200MHz (50MHz x 4) for Quad Output when using the Quad Output Fast Read

instructions. The memory can be programmed 1 to 256 bytes at a time, using the Page Program

instruction.

The EN25Q128 is designed to allow either single

Sector/Block

at a time or full chip erase operation. The

EN25Q128 can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector

or block

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. J, Issue Date: 2011/09/19

EN25Q128-104WIP Related Products

	EN25Q128-104WIP	EN25Q128-104BBAP	EN25Q128-104BBIP	EN25Q128-104FAP	EN25Q128-104FIP	EN25Q128-104WAP	EN25Q128-104YAP	EN25Q128-104YIP
Description	FLASH 2.7V PROM	FLASH 2.7V PROM	FLASH 2.7V PROM	FLASH 2.7V PROM	FLASH 2.7V PROM	FLASH 2.7V PROM	FLASH 2.7V PROM	FLASH 2.7V PROM

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