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EN25Q128-104WAP

Description
FLASH 2.7V PROM
Categorystorage    storage   
File Size1MB,57 Pages
ManufacturerEon
Websitehttp://www.essi.com.tw/
Environmental Compliance
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EN25Q128-104WAP Overview

FLASH 2.7V PROM

EN25Q128-104WAP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEon
package instructionHVSON, SOLCC8,.25
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum clock frequency (fCLK)104 MHz
Data retention time - minimum20
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-N8
length6 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals8
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize16MX8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Encapsulate equivalent codeSOLCC8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/SerialSERIAL
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height0.8 mm
Serial bus typeSPI
Maximum standby current0.00002 A
Maximum slew rate0.028 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
typeNOR TYPE
width5 mm
write protectHARDWARE/SOFTWARE
EN25Q128
EN25Q128
128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
128 M-bit Serial Flash
- 128 M-bit/16,384 K-byte/65,536 pages
- 256 bytes per programmable page
-
-
-
-
-
-
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
104MHz clock rate for Standard SPI
80MHz clock rate for two data bits
50MHz clock rate for four data bits
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Page program time: 0.8ms typical
Sector erase time: 50ms typical
Block erase time 200ms typical
Chip erase time: 45 seconds typical
Lockable 512 byte OTP security sector
Minimum 100K endurance cycle
-
-
-
-
-
Package Options
8 contact VDFN (5x6mm)
8 contact VDFN (6x8mm)
16 pins SOP 300mil body width
24 balls TFBGA (6x8mm)
All Pb-free packages are RoHS compliant
Low power consumption
- 12 mA typical active current
- 1
μA
typical power down current
-
-
-
Uniform Sector Architecture:
4096 sectors of 4-Kbyte
256 blocks of 64-Kbyte
Any sector or block can be erased individually
Industrial and Automotive temperature Range
GENERAL DESCRIPTION
The EN25Q128 is a 128 Megabit (16,384K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q128 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select, Serial
DQ
0
(DI), DQ
1
(DO), DQ
2
(WP#) and DQ
3
(NC). SPI clock frequencies of up to 80MHz are supported
allowing equivalent clock rates of 160MHz (80MHz x 2) for Dual Output when using the Dual Output
Fast Read instructions, and SPI clock frequencies of up to 50MHz are supported allowing equivalent
clock rates of 200MHz (50MHz x 4) for Quad Output when using the Quad Output Fast Read
instructions. The memory can be programmed 1 to 256 bytes at a time, using the Page Program
instruction.
The EN25Q128 is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25Q128 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. J, Issue Date: 2011/09/19

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