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ST4501SMSS

Description
Trans Voltage Suppressor Diode, 150W, 330V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, ULTRA MINIATURE PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size126KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

ST4501SMSS Overview

Trans Voltage Suppressor Diode, 150W, 330V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, ULTRA MINIATURE PACKAGE-2

ST4501SMSS Parametric

Parameter NameAttribute value
MakerSSDI
package instructionO-XELF-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage310 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XELF-N2
Maximum non-repetitive peak reverse power dissipation150 W
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage330 V
surface mountYES
technologyZENER
Terminal formNO LEAD
Terminal locationEND
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ST4462 – ST4506
Series
150 W Transient Voltage Suppressor
7.5 – 510 VOLTS
FEATURES:
Hermetically Sealed
Low Reverse Leakage
Voltage up to 510V
Ultra Miniature
2/
TX, TXV, and Space Level Screening Available
5 Times Greater Surge Than JAN13016 Series
¼ Size of conventional 1 W Zeners
DESIGNER’S DATA SHEET
Part Number / Ordering Information
ST ___ ___ ___
1/
│ └
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level (for SM, use –S)
5/
Package:
___= Axial Leaded
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
Type Number:
4462 - 4506
Maximum Ratings
Peak pulse power dissipation with a 10/1000
μ
s waveform
Steady State Power Dissipation
Operating and Storage Temp.
Maximum Forward Voltage Drop
I
F
= 1.0 Apk, T
A
= 25 ºC, pulsed
Thermal Resistance, (axial)
Junction to Lead L=3/8”
Symbol
P
PPM
P
D
T
op
& T
stg
V
F
Ρ
θJL
R
θJE
SM
Value
150
3
-65 to +175
1.5
42
32
SMS
Units
W
W
ºC
V
ºC/W
ºC/W
Thermal Resistance, (end tab)
Junction to Tab
AXIAL
DIM
A
B
C
D
MIN
---
---
1.00”
.028”
MAX
.085”
.170”
---
.034”
DIM
A
B
C
MIN
.075”
.125”
0.010”
MAX
0.085”
0.150”
0.022”
DIM
A
B
C
D
MIN
.090”
.175”
.022”
0.001”
MAX
.100”
.215”
.028”
––
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: T00029C
DOC
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