EN39SL801
EN39SL801
8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector,
CMOS 1.8 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range: 1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2
μA
typical standby current
•
Uniform Sector Architecture:
- 256 sectors of 2-Kword
•
-
-
-
-
High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 90ms typical
Block erase time: 180ms typical
Chip erase time: 2s typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector, Block and Chip Erase
•
Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
•
Low Vcc write inhibit < 1.2V
•
Minimum 100K endurance cycle
•
Package Options
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
•
Industrial temperature and Automotive
temperature Range
- 16 blocks of 32-Kword
- Any sector or block can be erased individually
•
Block protection:
- Hardware locking of blocks to prevent
program or erase operations within
individual blocks
•
Chip Unprotect Mode
GENERAL DESCRIPTION
The EN39SL801 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 words. Any word can be programmed typically in 8µs.The EN39SL801 features 1.8V
voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT
statements in high-performance microprocessor systems.
The EN39SL801 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls,
which eliminate bus contention issues. This device is designed to allow either single Sector/Block or full
chip erase operation, where each block can be individually protected against program/erase operations or
chip unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on
each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. D, Issue Date: 2011/09/15
EN39SL801
Table 1. PIN DESCRIPTION
Pin Name
A0-A18
Addresses
Function
A0 - A18
CE#
OE#
WE#
RESET#
Figure 1. LOGIC DIAGRAM
EN39SL801
DQ0 – DQ15
DQ0-DQ15 16 Data Inputs/Outputs
CE#
OE#
WE#
RESET#
Vcc
Vss
NC
Chip Enable
Output Enable
Write Enable
Hardware Reset Pin
Supply Voltage (1.65-1.95V)
Ground
Not Connected to anything
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. D, Issue Date: 2011/09/15
MEMS sensors
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