EN39SL801-70BIP datasheet, PDF

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EN39SL801-70BIP: Description8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only; Categorystorage storage; File Size462KB，45 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/

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EN39SL801-70BIP Overview

8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

EN39SL801-70BIP Parametric

Parameter Name	Attribute value
Maker	Eon
package instruction	LFBGA,
Reach Compliance Code	unknow
Maximum access time	70 ns
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	8388608 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Maximum seat height	1.3 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
type	NOR TYPE
width	6 mm

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EN39SL801

8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector,

CMOS 1.8 Volt-only

FEATURES

•

Single power supply operation

- Full voltage range: 1.65-1.95 volt for read and

write operations.

- Ideal for battery-powered applications.

•

High performance

- Access times as fast as 70 ns

•

Low power consumption (typical values at 5

MHz)

- 5 mA typical active read current

- 15 mA typical program/erase current

- 0.2

μA

typical standby current

•

Uniform Sector Architecture:

- 256 sectors of 2-Kword

•

High performance program/erase speed

Word program time: 8µs typical

Sector erase time: 90ms typical

Block erase time: 180ms typical

Chip erase time: 2s typical

•

JEDEC Standard Embedded Erase and

Program Algorithms

•

JEDEC standard DATA# polling and toggle

bits feature

•

Single Sector, Block and Chip Erase

•

Erase Suspend / Resume modes:

Read or program another Sector/Block during

Erase Suspend Mode

•

Low Vcc write inhibit < 1.2V

•

Minimum 100K endurance cycle

•

Package Options

- 48-ball 6mm x 8mm TFBGA

- 48-ball 4mm x 6mm WFBGA

•

Industrial temperature and Automotive

temperature Range

- 16 blocks of 32-Kword

- Any sector or block can be erased individually

•

Block protection:

- Hardware locking of blocks to prevent

program or erase operations within

individual blocks

•

Chip Unprotect Mode

GENERAL DESCRIPTION

The EN39SL801 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 524,288 words. Any word can be programmed typically in 8µs.The EN39SL801 features 1.8V

voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT

statements in high-performance microprocessor systems.

The EN39SL801 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls,

which eliminate bus contention issues. This device is designed to allow either single Sector/Block or full

chip erase operation, where each block can be individually protected against program/erase operations or

chip unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on

each sector or block.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. D, Issue Date: 2011/09/15

EN39SL801-70BIP Related Products

	EN39SL801-70BIP	EN39SL801	EN39SL801-70BAP	EN39SL801-70NAP	EN39SL801-70NIP	EN39SL801-90BAP	EN39SL801-90BIP	EN39SL801-90NAP	EN39SL801-90NIP
Description	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

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