Naina Semiconductor Ltd.
emiconductor
Non
Non-isolated Thyristor Module
Features
•
•
•
•
•
Low voltage three-phase
High surge current of 2500A @ 60Hz
Easy construction
Non-isolated
Mounting base as common anode
130NT3
Voltage Ratings
(T
C
= 25
O
C unless otherwise specified)
Parameter
Maximum repetitive peak
reverse voltage
Maximum non-repetitive
peak reverse voltage
Maximum repetitive peak
off-state voltage
Symbol
V
RRM
V
RSM
V
DRM
Values
300
360
300
Units
V
V
V
NT3
Electrical Characteristics
(T
C
= 25
O
C unless otherwise specified)
Parameter
Average on-state current
R.M.S. on-state current
On-state surge current
I t required for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate current
Peak gate voltage (forward)
Peak gate voltage (reverse)
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
Holding current
I
0
= 200mA, V
0
= ½ V
DRM
, dI
G
/dt = 1
A/µs
0
2/3
T
J
= 150 C, V
0
= V
DRM
, exponential
wave
2
Conditions
Single phase, half
half-wave, 180
0
conduction @ T
C
= 116 C
0
Symbol
I
T(AV)
I
T(RMS)
I
TSM
It
P
GM
P
GM(AV)
I
GM
VFGM
VRGM
di/dt
dv/dt
I
H
2
Values
130
204
3300
51500
10
1
3
10
5
50
50
70
Units
A
A
A
AS
W
W
A
V
V
A/µs
V/µs
mA
2
half cycle, 50Hz/60Hz, peak value,
non-repetitive
repetitive
Thermal & Mechanical Specifications
(T
C
= 25
O
C unless otherwise specified)
Parameter
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
Symbol
T
J
T
STG
R
th(JC)
Values
-30 to +150
-30 to +125
0.25
Units
0
0
C
0
C
C/W
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
4205450
0120
sales@nainasemi.com • www.nainasemi.com
Naina Semiconductor Ltd.
emiconductor
130NT3
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
4205450
0120
sales@nainasemi.com • www.nainasemi.com
Power technology
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