Preliminary
TSC5305D
High Voltage NPN Transistor with Diode
TO-263
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 750V
Ic = 5A
V
CE (SAT)
, = 1.2V @ Ic / Ib = 4A / 1A
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Ordering Information
Part No.
TSC5305DCZ
TSC5305DCM
Packing
Tube
T&R
Package
TO-220
TO-263
Block Diagram
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Pulse
Total Power Dissipation (Tc=25
o
C)
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
P
D
T
J
T
STG
RΘjc
RΘja
I
B
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
750V
400V
10
5
10
2
4
75
+150
- 65 to +150
1.65
65
Unit
V
V
V
A
A
W
o
o
o
o
C
C
C/W
C/W
TS5305D Preliminary
1-1
2004/09 rev. B
Preliminary
Electrical Characteristics
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I
C
= 1mA, I
B
= 0
I
C
= 5mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 500V, I
E
= 0
V
EB
= 9V, I
C
= 0
I
C
/ I
B
= 1.0A / 0.2A
I
C
/ I
B
= 2.0A / 0.5A
I
C
/ I
B
= 4.0A / 1.0A
Base-Emitter Saturation Voltage
I
C
/ I
B
= 1.0A / 0.2A
I
C
/ I
B
= 2.0A / 0.5A
DC Current Gain
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 2A
Turn On Time
Storage Time
Fall Time
Doide
Fall Time
Forward Voltage
I
C
= 3A
I
C
= 3A
V
CC
= 250V, I
C
= 2A,
I
B1
= I
B2
= 0.4A,
t
p= 25uS
Duty cycle < 1%
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
1
V
CE(SAT)
2
V
CE(SAT)
3
V
CB(SAT)
1
V
CB(SAT)
2
h
FE
1
h
FE
2
750
400
9
--
--
--
--
--
--
--
15
10
--
--
--
--
--
--
--
--
--
--
--
--
--
20
--
--
--
--
--
--
--
10
10
0.3
0.5
1.2
1.0
1.1
--
--
0.5
3
0.2
uS
uS
uS
V
V
V
V
uA
uA
V
Conditions
Symbol
Min
Typ
Max
Unit
t
ON
t
STG
t
F
t
F
Vf
--
--
--
--
700
1.4
nS
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TS5305D Preliminary
2-2
2004/09 rev. B
Sensor
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