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FR304G

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size50KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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FR304G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

R
FR301 G TH R U FR307 G
GLASS PASSIVATED FAST RECOVERY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:3.0Amperes
S E M I C O N D U C T O R
FEATURES
Low leakage
Low forward voltage drop
High current capability
High current surge
High reliability
High temperature soldering guaranteed:260°C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-201AD
1.0(25.4)
MIN
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750,Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.041 OUNCE,1.18 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
°
C ambient temperature unless otherwise specified.Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 3.0A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
T
A
=100
°
C
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
FR
301G
50
35
50
FR
302G
100
70
100
FR
303G
200
140
200
FR
304G
400
280
400
3.0
150
FR
305G
600
420
600
FR
306G
800
560
800
FR
307G
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mps
A
mps
V
olts
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
1.3
10
150
μ
A
250
500
t
rr
C
J
T
J
T
STG
150
60
-55 to+150
-55 to+150
ns
pF
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts D.C.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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