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DB104

Description
1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size37KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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DB104 Overview

1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

DB104 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage400 V
Maximum average input current1 A
Processing package descriptionPLASTIC, DB, 4 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current50 A
R
DB101(DF005) THRU DB107(DF10)
GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 Amps
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Glass passivated chip junction
Rating to 1000V PRV
0.047(1
.
20)
Ideal for printed circuit board
0.035(0.89)
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
0.256(6.5)
0.240(6.1)
DB
MECHANICAL DATA
Case: DB molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,method 2026
Mounting Position: Any
0.134(3.40)
0.083(2
.
10)
0.024(0.60)
0.016(0.40)
0.346(8.80)
0.313(7
.
95)
0.209(5.3)
0.193(4
.
9)
0.195(4.95)
0.150(3.80)
0.358(9
.
10)
0.299(7.60)
0.013(0
.
33)
0.006(0
.
15)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
°
C ambient temperature unless otherwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
DB101 DB102 DB103
DF005
50
35
50
DF01
100
70
100
DF02
200
140
200
DB104
DF04
400
280
400
1.0
DB105
DF06
600
420
600
DB106 DB107
DF08
800
560
800
DF10
1000
700
1000
Units
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 1
.
0 A DC
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mp
A
mps
V
olts
30
1.1
10
500
μ
A
P
F
°C/W
°C
T
A
=125
°
C
Typical junction capacitance(Note1)
Typical thermal resistence(Note 2)
Operating junction and storage temperature
range
C
J
R
θJA
T
J
T
STG
25
40
-55 to +150
Note:
1.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
2. Thermal resistance junction to ambient mounted on P.C.B. With 05*0.5 inches(1.3*1.3mm) copper pads
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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Description 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE

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