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DTC123EL-AN3-R

Description
DIGITAL TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size184KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

DTC123EL-AN3-R Overview

DIGITAL TRANSISTORS

DTC123EL-AN3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
UNISONIC TECHNOLOGIES CO., LTD
DTC123E
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
NPN SILICON TRANSISTOR
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
DTC123EL-AE3-R
DTC123EG-AE3-R
DTC123EL-AL3-R
DTC123EG-AL3-R
DTC123EL-AN3-R
DTC123EG-AN3-R
DTC123EL-T92-B
DTC123EG-T92-B
DTC123EL-T92-K
DTC123EG-T92-K
Package
SOT-23
SOT-323
SOT-523
TO-92
TO-92
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
G
O
I
G
O
I
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bluk
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-085,D

DTC123EL-AN3-R Related Products

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Description DIGITAL TRANSISTORS Broadband 4W GaAs HBT Power Amplifier 1400MHz to 2700MHz DIGITAL TRANSISTORS DIGITAL TRANSISTORS DIGITAL TRANSISTORS DIGITAL TRANSISTORS
Is it Rohs certified? conform to - conform to conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 -
Contacts 3 - 3 3 3 -
Reach Compliance Code compli - compli compli compli -
ECCN code EAR99 - EAR99 EAR99 EAR99 -
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 - BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 -
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 20 - 20 20 20 -
JESD-30 code R-PDSO-G3 - R-PDSO-G3 O-PBCY-T3 O-PBCY-T3 -
Number of components 1 - 1 1 1 -
Number of terminals 3 - 3 3 3 -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR ROUND ROUND -
Package form SMALL OUTLINE - SMALL OUTLINE CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN - NPN NPN NPN -
Maximum power dissipation(Abs) 0.15 W - 0.2 W 0.625 W 0.625 W -
surface mount YES - YES NO NO -
Terminal form GULL WING - GULL WING THROUGH-HOLE THROUGH-HOLE -
Terminal location DUAL - DUAL BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON - SILICON SILICON SILICON -
Nominal transition frequency (fT) 250 MHz - 250 MHz 250 MHz 250 MHz -
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