EEWORLDEEWORLDEEWORLD

Part Number

Search

UT100N03G-TM3-T

Description
100A, 30V N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size380KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

UT100N03G-TM3-T Overview

100A, 30V N-CHANNEL POWER MOSFET

UT100N03G-TM3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)875 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0053 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)400 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UT100N03
100A, 30V N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
Power MOSFET
DESCRIPTION
The
UT100N03
uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
1
TO-251
1
TO-252
FEATURES
1
1
TO-263
Drain
DFN-8(5x6)
* R
DS(ON)
< 5.3mΩ@V
GS
=10 V, I
D
=50 A
* R
DS(ON)
< 8.0mΩ@V
GS
=4.5 V, I
D
=40 A
SYMBOL
Gate
Source
ORDERING INFORMATION
1
G
G
G
G
G
G
G
S
Pin Assignment
2 3 4 5 6 7 8
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
S S G D D D D
Packing
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UT100N03L-TA3-T
UT100N03G-TA3-T
TO-220
UT100N03L-TF3-T
UT100N03G-TF3-T
TO-220F
UT100N03L-TM3-T
UT100N03G-TM3-T
TO-251
UT100N03L-TN3-R
UT100N03G-TN3-R
TO-252
UT100N03L-TND-R
UT100N03G-TND-R
TO-252D
UT100N03L-TQ2-T
UT100N03G-TQ2-T
TO-263
UT100N03L-TQ2-R
UT100N03G-TQ2-R
TO-263
-
UT100N03G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-193.H

UT100N03G-TM3-T Related Products

UT100N03G-TM3-T UT100N03G-TF3-T UT100N03G-TN3-R UT100N03G-TND-R UT100N03_15 UT100N03L-TM3-T UT100N03L-TF3-T UT100N03L-TN3-R UT100N03L-TND-R
Description 100A, 30V N-CHANNEL POWER MOSFET N-CHANNEL MOSFET ARRAY FOR SWITCHING N-CHANNEL MOSFET ARRAY FOR SWITCHING N-CHANNEL MOSFET ARRAY FOR SWITCHING N-CHANNEL MOSFET ARRAY FOR SWITCHING 100A, 30V N-CHANNEL POWER MOSFET N-CHANNEL MOSFET ARRAY FOR SWITCHING N-CHANNEL MOSFET ARRAY FOR SWITCHING N-CHANNEL MOSFET ARRAY FOR SWITCHING

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1440  240  2640  2054  102  29  5  54  42  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号