UNISONIC TECHNOLOGIES CO., LTD
UT100N03
100A, 30V N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
Power MOSFET
DESCRIPTION
The
UT100N03
uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
1
TO-251
1
TO-252
FEATURES
1
1
TO-263
Drain
DFN-8(5x6)
* R
DS(ON)
< 5.3mΩ@V
GS
=10 V, I
D
=50 A
* R
DS(ON)
< 8.0mΩ@V
GS
=4.5 V, I
D
=40 A
SYMBOL
Gate
Source
ORDERING INFORMATION
1
G
G
G
G
G
G
G
S
Pin Assignment
2 3 4 5 6 7 8
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
D S - - - - -
S S G D D D D
Packing
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UT100N03L-TA3-T
UT100N03G-TA3-T
TO-220
UT100N03L-TF3-T
UT100N03G-TF3-T
TO-220F
UT100N03L-TM3-T
UT100N03G-TM3-T
TO-251
UT100N03L-TN3-R
UT100N03G-TN3-R
TO-252
UT100N03L-TND-R
UT100N03G-TND-R
TO-252D
UT100N03L-TQ2-T
UT100N03G-TQ2-T
TO-263
UT100N03L-TQ2-R
UT100N03G-TQ2-R
TO-263
-
UT100N03G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-193.H
UT100N03
MARKING
TO-251 / TO-252 / TO-252D / TO-263
DFN-8(5×6)
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-193.H
UT100N03
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
100
A
Pulsed Drain Current (Note 2)
I
DM
400
A
Single Pulsed Avalanche Current (Note 3)
I
AS
35
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
875
mJ
TO-220/TO-263
100
TO-220F
36
Power Dissipation
P
D
W
TO-251/TO-252
50
TO-252D
DFN-8(5×6)
21
Junction Temperature
T
J
+175
°С
Strong Temperature
T
STG
-55 ~ +175
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, I
AS
= 35A, V
DD
= 25V, R
G
= 25Ω, Starting T
J
= 25°С.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
110
40.3 (Note 1, 2)
1.5
3.47
3
6 (Note 1, 2)
°С/W
°С/W
UNIT
TO-220/TO-220F
TO-263
Junction to Ambient
θ
JA
TO-251/TO-252
TO-252D
DFN-8(5×6)
TO-220/TO-263
TO-220F
Junction to Case
θ
JC
TO-251/TO-252
TO-252D
DFN-8(5×6)
Notes: 1. Maximum under Steady State conditions is 90 °C/W.
2. Surface Mounted on 1" x 1" FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-193.H
UT100N03
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise noted)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=250 µA
V
DS
=30 V,V
GS
=0 V
V
DS
=0 V, V
GS
= ±20 V
V
DS
=V
GS
, I
D
=250 µA
V
GS
=10 V, I
D
=50 A
V
GS
=4.5 V, I
D
=40 A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Power MOSFET
MIN TYP MAX UNIT
30
1
±100
1
3.05
4.2
9500
800
300
50
20.8
19
25.7
10
128
34
65
nC
50
20
200
70
1.5
90
3
5.3
8
V
µA
nA
V
mΩ
DYNAMIC PARAMETERS(Note3)
Input Capacitance
C
ISS
V
DS
=15V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS(Note3)
Total Gate Charge
Q
G
V
DS
=15V, V
GS
=5V, I
D
=16A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=15V, I
D
=1A, R
GEN
=6Ω
Turn-ON Rise Time
t
R
V
GS
=10 V
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=20 A,V
GS
=0 V
Drain-Source Diode Forward Current
I
S
Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.
pF
ns
V
A
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www.unisonic.com.tw
4 of 8
QW-R502-193.H
UT100N03
TEST CIRCUIT AND WAVEFORM
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-193.H