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UT3443L-AG6-R

Description
P-CHANNEL 2.5-V (G-S) MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size142KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UT3443L-AG6-R Overview

P-CHANNEL 2.5-V (G-S) MOSFET

UT3443L-AG6-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionLEAD FREE PACKAGE-6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)20 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UT3443
Preliminary
Power MOSFET
P-CHANNEL 2.5-V (G-S)
MOSFET
DESCRIPTION
The UTC
UT3443
is a P-channel power MOSFET using UTC’s
advanced trench technology to provide customers with a minimum
on-state resistance and extremal low gate charge with a 12V gate
rating.
FEATURES
* V
DS(V)
= -20V
* I
D
=-4.5A
*R
DS(ON)
< 100mΩ @V
GS
= -2.5V,
R
DS(ON)
< 65mΩ @V
GS
= -4.5V
SYMBOL
S (4)
G (3)
D (1, 2, 5, 6)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3443L-AG6-R
UT3443G-AG6-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOT-26
S: Source
Pin Assignment
1, 2, 5, 6
3
4
D
G
S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-557.a

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UT3443L-AG6-R UT3443
Description P-CHANNEL 2.5-V (G-S) MOSFET P-CHANNEL 2.5-V (G-S) MOSFET
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